{"Status":"ACTIVE","Package Body Material":"GLASS","Breakdown Voltage-Min":"60 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Number of Terminals":"2","Variable Capacitance Diode Classification":"ABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"300","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Pac...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"65 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"300","Terminal Position":...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"65 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"2.8","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Diode Cap Tolerance":"5 %","Quality Factor-Min":"300","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuratio...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"60 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"3...

{"Status":"ACTIVE","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"60 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"300","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Configu...

{"C1\/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"300","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"Y","Mil Number":"JAN1N5140A","@V(T){V(J)}(V)(Test Condition)":"4.0"}...

{"C1\/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"300","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"Y","Mil Number":"JANTX1N5140A","@V(T){V(J)}(V)(Test Condition)":"4.0"}...

{"C1\/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"300","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"Y","Mil Number":"JANTXV1N5140A","@V(T){V(J)}(V)(Test Condition)":"4.0"}...

{"C1\/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"300","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...