Advancedsemiconductor.com/1N5469A
{"Status":"ACTIVE","Package Body Material":"GLASS","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.9","Number of Terminals":"2","Variable Capacitance Diode Classification":"ABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"31.4 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"500","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Configuration":"SINGLE","P...
1286 Bytes - 13:04:19, 02 May 2024
Aeroflex.com/1N5469A
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.9","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"27 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"500","Terminal Position"...
1350 Bytes - 13:04:19, 02 May 2024
Aeroflex.com/1N5469ACO
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"30 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"2.9","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"27 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"500","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UNS...
1224 Bytes - 13:04:19, 02 May 2024
Alphaind.com/1N5469A06
{"C1\/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"500","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"27p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
806 Bytes - 13:04:19, 02 May 2024
Alphaind.com/1N5469A12
{"C1\/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"500","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"27p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
807 Bytes - 13:04:19, 02 May 2024
Alphaind.com/1N5469A18
{"C1\/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"500","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"27p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
807 Bytes - 13:04:19, 02 May 2024
Apitech.com/1N5469A
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.9","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"27 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"...
1392 Bytes - 13:04:19, 02 May 2024
Microsemi.com/1N5469A
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.9","Package Style":"LONG FORM","Variable Capacitance Diode Classification":"ABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"27 pF","Power Dissipation Limit-Max":"0.4000 W","Diode Cap Tolerance":"10 %","Quality Factor-Min":"500","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND...
1273 Bytes - 13:04:19, 02 May 2024
Various/1N5469A
{"C1\/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"500","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"27p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
763 Bytes - 13:04:19, 02 May 2024
Various/1N5469ACHIP
{"C1\/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"500","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"27p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
742 Bytes - 13:04:19, 02 May 2024