Aeroflex.com/1N5702
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"65 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"3.2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"20 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"22 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"375","Terminal Position"...
1346 Bytes - 23:57:16, 02 May 2024
Aeroflex.com/1N5702A
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"65 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"3.2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"22 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"375","Terminal Position"...
1350 Bytes - 23:57:16, 02 May 2024
Aeroflex.com/1N5702ACO
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"65 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"3.2","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"22 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"375","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Pack...
1249 Bytes - 23:57:16, 02 May 2024
Aeroflex.com/1N5702B
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"65 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"3.2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"22 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"375","Terminal Position":...
1349 Bytes - 23:57:16, 02 May 2024
Aeroflex.com/1N5702BCO
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"65 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"3.2","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"22 pF","Diode Cap Tolerance":"5 %","Quality Factor-Min":"375","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Packa...
1248 Bytes - 23:57:16, 02 May 2024
Aeroflex.com/1N5702CO
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"65 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"3.2","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"22 pF","Diode Cap Tolerance":"20 %","Quality Factor-Min":"375","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Pack...
1242 Bytes - 23:57:16, 02 May 2024
Apitech.com/1N5702A
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"65 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"3.2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"22 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"...
1390 Bytes - 23:57:16, 02 May 2024
Apitech.com/1N5702B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"65 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"3.2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"22 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"3...
1392 Bytes - 23:57:16, 02 May 2024
Microchip.com/TC51N5702ECB
{"Terminal Finish":"MATTE TIN","Terminal Pitch":"0.9500 mm","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Supply Voltage-Nom (Vsup)":"1 V","Temperature Grade":"INDUSTRIAL","Analog IC - Other Type":"POWER SUPPLY SUPPORT CKT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"-40 Cel","Package Body Material":"PLASTIC\/EPOXY","Number of Channels":"1","Number of Functions":"1","EU RoHS Compliant":"Yes","Supply Voltage-Max (Vsup)":"10 V","China RoHS...
1500 Bytes - 23:57:16, 02 May 2024
Microchip.com/TC51N5702ECBTR
{"Terminal Finish":"MATTE TIN","Terminal Pitch":"0.9500 mm","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Supply Voltage-Nom (Vsup)":"1 V","Temperature Grade":"INDUSTRIAL","Analog IC - Other Type":"POWER SUPPLY SUPPORT CKT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"-40 Cel","Package Body Material":"PLASTIC\/EPOXY","Number of Channels":"1","Number of Functions":"1","EU RoHS Compliant":"Yes","Supply Voltage-Max (Vsup)":"10 V","China RoHS...
1514 Bytes - 23:57:16, 02 May 2024
Various/1N5702A
{"C1\/C2 Min. Capacitance Ratio":"3.2","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"375","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"22p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
763 Bytes - 23:57:16, 02 May 2024
Various/1N5702B
{"C1\/C2 Min. Capacitance Ratio":"3.2","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"375","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"22p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
763 Bytes - 23:57:16, 02 May 2024
Various/1N5702C
{"C1\/C2 Min. Capacitance Ratio":"3.2","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"375","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"22p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
763 Bytes - 23:57:16, 02 May 2024