Dla.mil/1N5807+JAN
{"@Temp. (°C) (Test Condition)":"75","I(RM) Max.(A) Pk. Rev. Current":"150u","t(rr) Max.(s) Rev.Rec. Time":"30n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"875m","Package":"Axial-4","I(O) Max.(A) Output Current":"6.0","I(RM) Max.(A) Reverse Current":"5.0u","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Military":"Y","@I(F) (A) (Test Condition)":"1.0","@I(FM) (A) (Test Condition)":"4.0","Mil Number":"JAN1N5807","@I(R) (A) (Test Condition)":"1.0"}...
1026 Bytes - 02:47:08, 05 May 2024
Dla.mil/1N5807+JANS
{"@Temp. (°C) (Test Condition)":"75","I(RM) Max.(A) Pk. Rev. Current":"150u","t(rr) Max.(s) Rev.Rec. Time":"30n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"875m","Package":"Axial-4","I(O) Max.(A) Output Current":"6.0","I(RM) Max.(A) Reverse Current":"5.0u","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Military":"Y","@I(F) (A) (Test Condition)":"1.0","@I(FM) (A) (Test Condition)":"4.0","Mil Number":"JANS1N5807","@I(R) (A) (Test Condition)":"1.0"}...
1032 Bytes - 02:47:08, 05 May 2024
Dla.mil/1N5807+JANTX
{"@Temp. (°C) (Test Condition)":"75","I(RM) Max.(A) Pk. Rev. Current":"150u","t(rr) Max.(s) Rev.Rec. Time":"30n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"875m","Package":"Axial-4","I(O) Max.(A) Output Current":"6.0","I(RM) Max.(A) Reverse Current":"5.0u","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Military":"Y","@I(F) (A) (Test Condition)":"1.0","@I(FM) (A) (Test Condition)":"4.0","Mil Number":"JANTX1N5807","@I(R) (A) (Test Condition)":"1.0"}...
1037 Bytes - 02:47:08, 05 May 2024
Dla.mil/1N5807+JANTXV
{"@Temp. (°C) (Test Condition)":"75","I(RM) Max.(A) Pk. Rev. Current":"150u","t(rr) Max.(s) Rev.Rec. Time":"30n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"875m","Package":"Axial-4","I(O) Max.(A) Output Current":"6.0","I(RM) Max.(A) Reverse Current":"5.0u","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Military":"Y","@I(F) (A) (Test Condition)":"1.0","@I(FM) (A) (Test Condition)":"4.0","Mil Number":"JANTXV1N5807","@I(R) (A) (Test Condition)":"1.0"}...
1044 Bytes - 02:47:08, 05 May 2024
Dla.mil/1N5807US+JAN
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JAN1N5807US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","@Tem...
1151 Bytes - 02:47:08, 05 May 2024
Dla.mil/1N5807US+JANS
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANS1N5807US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","@Te...
1156 Bytes - 02:47:08, 05 May 2024
Dla.mil/1N5807US+JANTX
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTX1N5807US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","@T...
1162 Bytes - 02:47:08, 05 May 2024
Dla.mil/1N5807US+JANTXV
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTXV1N5807US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","@...
1169 Bytes - 02:47:08, 05 May 2024
Eic_semiconductor/1N5807US
{"Peak Rep Rev Volt":"50(V)","Product Depth (mm)":"3.6(mm)","Peak Non-Repetitive Surge Current":"125(A)","Forward Current":"6000(mA)","Peak Reverse Recovery Time":"30(ns)","Mounting":"Surface Mount","Peak Reverse Current":"5(uA)","Forward Voltage":"0.875(V)","Product Length (mm)":"4.8(mm)","Rectifier Type":"Switching Diode","Operating Temperature Classification":"Military","Rad Hardened":"No","Rev Recov Time":"30(ns)","Package Type":"SMB","Operating Temp Range":"-65C to 175C","Maximum Forward Current":"6000...
1703 Bytes - 02:47:08, 05 May 2024
Microchip.com/1N5807
{"Peak Rep Rev Volt":"50(V)","Peak Non-Repetitive Surge Current":"125(A)","Peak Reverse Recovery Time":"30(ns)","Mounting":"Through Hole","Peak Reverse Current":"5(uA)","Rad Hardened":"Yes","Packaging":"Bag","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Package Type":"Case E","Maximum Forward Current":"6000(mA)","Peak Forward Voltage":"0.875(V)","Configuration":"Single","Pin Count":"2"}...
1450 Bytes - 02:47:08, 05 May 2024
Microchip.com/JANTX1N5807
1060 Bytes - 02:47:08, 05 May 2024
Microsemi.com/1N5807
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"5\u00b5A @ 50V","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Family":"Diodes, Rectifiers - Single","Standard Package":"1","Series":"-","Capacitance @ Vr, F":"60pF @ 10V, 1MHz","Supplier Device Package":"-","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,9,11","Current - Average Rectified (Io)":"3A","Operating Temperature - Junction":"-65\u00b0C ~ 175\u00b0C","Package \/ Case":"B, Axial","Voltage...
1495 Bytes - 02:47:08, 05 May 2024
Microsemi.com/1N5807CB
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"HERMETIC SEALED, GLASS, E, 2 PIN","Terminal Form":"WIRE","Package Style":"LONG FORM","Number of Phases":"1","Diode Element Material":"SILICON","Application":"ULTRA FAST RECOVERY","Average Forward Current-Max":"3 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Number of T...
1245 Bytes - 02:47:08, 05 May 2024
Microsemi.com/1N5807CBUS
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"HERMETIC SEALED, GLASS, D-5B, 2 PIN","Terminal Form":"WRAP AROUND","Package Style":"LONG FORM","Average Forward Current-Max":"3 A","Number of Phases":"1","Diode Element Material":"SILICON","Application":"ULTRA FAST RECOVERY","Number of Elements":"1","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"END","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","Con...
1287 Bytes - 02:47:08, 05 May 2024
Microsemi.com/1N5807JAN
{"Peak Rep Rev Volt":"50 V","Avg. Forward Curr (Max)":"6","Peak Non-Repetitive Surge Current":"125 A","Rectifier Type":"Switching Diode","Mounting":"Through Hole","Rad Hardened":"No","Forward Voltage":"0.875 V","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Rev Recov Time":"30 ns","Package Type":"Case E","Rev Curr":"5 uA","Configuration":"Single","Pin Count":"2"}...
1392 Bytes - 02:47:08, 05 May 2024
Microsemi.com/1N5807JANTX
{"Peak Rep Rev Volt":"50(V)","Avg. Forward Curr (Max)":"6","Peak Non-Repetitive Surge Current":"125(A)","Rectifier Type":"Switching Diode","Peak Reverse Recovery Time":"30(ns)","Mounting":"Through Hole","Forward Current":"6000(mA)","Peak Reverse Current":"5(uA)","Rad Hardened":"No","Forward Voltage":"0.875(V)","Packaging":"Bag","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Rev Recov Time":"30(ns)","Package Type":"Case E","Maximum Forward Current":"6000(mA)","Rev Cu...
1622 Bytes - 02:47:08, 05 May 2024
Microsemi.com/1N5807JANTXV
1009 Bytes - 02:47:08, 05 May 2024
Microsemi.com/1N5807R
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Terminal Form":"WIRE","Package Style":"LONG FORM","Number of Phases":"1","Diode Element Material":"SILICON","Application":"FAST RECOVERY","Average Forward Current-Max":"6 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","Reverse Recovery Time-Max":"0.0300 us","Number of El...
1171 Bytes - 02:47:08, 05 May 2024
Microsemi.com/1N5807U4
{"Status":"ACTIVE","Terminal Finish":"GOLD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Package Style":"CHIP CARRIER","Rep Pk Reverse Voltage-Max":"50 V","Number of Phases":"1","Diode Element Material":"SILICON","Average Forward Current-Max":"6 A","Application":"GENERAL PURPOSE","Number of Elements":"1","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"BOTTOM","Diode Type":"RECTIFIER DIODE","Package Shape":"RECT...
1256 Bytes - 02:47:08, 05 May 2024
Microsemi.com/1N5807U4M
{"Status":"ACTIVE","Terminal Finish":"GOLD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-2","Terminal Form":"NO LEAD","Package Style":"CHIP CARRIER","Rep Pk Reverse Voltage-Max":"50 V","Number of Phases":"1","Diode Element Material":"SILICON","Average Forward Current-Max":"6 A","Application":"GENERAL PURPOSE","Number of Elements":"1","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"BOTTOM","Diode Type":"RECTIFIER DIODE","Package Shape":"RECT...
1260 Bytes - 02:47:08, 05 May 2024
Microsemi.com/1N5807URS
{"Status":"ACTIVE","Package Body Material":"GLASS","Mfr Package Description":"HERMETIC SEALED, GLASS, MELF-2","Terminal Form":"WRAP AROUND","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"50 V","Number of Phases":"1","Diode Element Material":"SILICON","Average Forward Current-Max":"3 A","Application":"ULTRA FAST RECOVERY","Number of Elements":"1","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"END","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","C...
1288 Bytes - 02:47:08, 05 May 2024
Microsemi.com/1N5807US
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"5\u00b5A @ 50V","Product Photos":"1N6643US","Family":"Diodes, Rectifiers - Single","Standard Package":"1","Series":"-","Capacitance @ Vr, F":"60pF @ 10V, 1MHz","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Supplier Device Package":"B, SQ-MELF","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,09,11 US\/URS","Current - Average Rectified (Io)":"3A","Operating Temperature - Junction":"-65\u00b0C ~ 175...
1639 Bytes - 02:47:08, 05 May 2024
Microsemi.com/1N5807USJANTX
1027 Bytes - 02:47:08, 05 May 2024
Microsemi.com/1N5807USJANTXV
{"Category":"Rectifier","Peak Non-Repetitive Surge Current":"125 A","Description":"Value","Package":"2E-MELF","Peak Average Forward Current":"6 A","Mounting":"Surface Mount","Peak Reverse Current":"5 uA","Peak Reverse Recovery Time":"30 ns","Operating Temperature":"-65 to 175 \u00b0C","Peak Forward Voltage":"0.875@4A V","Peak Reverse Repetitive Voltage":"50 V","Configuration":"Single","Type":"Switching Diode","Manufacturer":"Microsemi"}...
1349 Bytes - 02:47:08, 05 May 2024
Microsemi.com/1N5807X
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Terminal Form":"WIRE","Package Style":"LONG FORM","Number of Phases":"1","Diode Element Material":"SILICON","Application":"FAST RECOVERY","Average Forward Current-Max":"6 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","Reverse Recovery Time-Max":"0.0300 us","Number of El...
1169 Bytes - 02:47:08, 05 May 2024
Microsemi.com/JAN1N5807
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"5\u00b5A @ 50V","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Family":"Diodes, Rectifiers - Single","Standard Package":"1","Series":"Military, MIL-PRF-19500\/477","Capacitance @ Vr, F":"60pF @ 10V, 1MHz","Supplier Device Package":"*","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,9,11","Current - Average Rectified (Io)":"6A","Operating Temperature - Junction":"-65\u00b0C ~ 175\u00b0C","Package \...
1529 Bytes - 02:47:08, 05 May 2024
Microsemi.com/JAN1N5807CBUS
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"HERMETIC SEALED, GLASS, D-5B, 2 PIN","Terminal Form":"WRAP AROUND","Package Style":"LONG FORM","Average Forward Current-Max":"3 A","Number of Phases":"1","Diode Element Material":"SILICON","Application":"ULTRA FAST RECOVERY","Number of Elements":"1","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"END","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","Con...
1307 Bytes - 02:47:08, 05 May 2024
Microsemi.com/JAN1N5807R
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Terminal Form":"WIRE","Package Style":"LONG FORM","Number of Phases":"1","Diode Element Material":"SILICON","Application":"FAST RECOVERY","Average Forward Current-Max":"6 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","Reverse Recovery Time-Max":"0.0300 us","Number of El...
1187 Bytes - 02:47:08, 05 May 2024
Microsemi.com/JAN1N5807URS
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"5\u00b5A @ 50V","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Family":"Diodes, Rectifiers - Single","Standard Package":"100","Series":"Military, MIL-PRF-19500\/477","Capacitance @ Vr, F":"60pF @ 10V, 1MHz","Supplier Device Package":"B, SQ-MELF","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,09,11 US\/URS","Current - Average Rectified (Io)":"3A","Operating Temperature - Junction":"-65\u00b0C ~ 17...
1580 Bytes - 02:47:08, 05 May 2024
Microsemi.com/JAN1N5807US
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"5\u00b5A @ 50V","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Family":"Diodes, Rectifiers - Single","Standard Package":"1","Series":"Military, MIL-PRF-19500\/477","Capacitance @ Vr, F":"60pF @ 10V, 1MHz","Supplier Device Package":"B, SQ-MELF","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,09,11 US\/URS","Current - Average Rectified (Io)":"6A","Operating Temperature - Junction":"-65\u00b0C ~ 175\...
1548 Bytes - 02:47:08, 05 May 2024
Microsemi.com/JAN1N5807X
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Terminal Form":"WIRE","Package Style":"LONG FORM","Number of Phases":"1","Diode Element Material":"SILICON","Application":"FAST RECOVERY","Average Forward Current-Max":"6 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","Reverse Recovery Time-Max":"0.0300 us","Number of El...
1187 Bytes - 02:47:08, 05 May 2024
Microsemi.com/JANKCF1N5807
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"UNSPECIFIED","Mfr Package Description":"DIE-1","Terminal Form":"NO LEAD","Package Style":"UNCASED CHIP","Average Forward Current-Max":"6 A","Number of Phases":"1","Diode Element Material":"SILICON","Application":"FAST RECOVERY","Number of Elements":"1","Terminal Position":"UPPER","Diode Type":"RECTIFIER DIODE","Package Shape":"SQUARE","Configuration":"SINGLE","Number of Terminals":"1","Reverse Recovery Time-Max":"0.0300 us","Surface Mo...
1200 Bytes - 02:47:08, 05 May 2024
Microsemi.com/JANS1N5807
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD OVER NICKEL OVER COPPER","Package Body Material":"GLASS","Mfr Package Description":"HERMETIC SEALED, GLASS PACKAGE-2","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"50 V","Number of Phases":"1","Diode Element Material":"SILICON","Application":"ULTRA FAST RECOVERY","Average Forward Current-Max":"3 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","...
1325 Bytes - 02:47:08, 05 May 2024
Microsemi.com/JANS1N5807URS
{"Status":"ACTIVE","Package Body Material":"GLASS","Mfr Package Description":"HERMETIC SEALED, GLASS, MELF-2","Terminal Form":"WRAP AROUND","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"50 V","Number of Phases":"1","Diode Element Material":"SILICON","Average Forward Current-Max":"3 A","Application":"ULTRA FAST RECOVERY","Number of Elements":"1","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"END","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","C...
1313 Bytes - 02:47:08, 05 May 2024
Microsemi.com/JANS1N5807US
{"Terminal Finish":"TIN LEAD","Terminal Form":"WRAP AROUND","Application":"ULTRA FAST RECOVERY","Number of Phases":"1","Package Shape":"ROUND","Reverse Recovery Time-Max":"0.0300 us","Status":"ACTIVE","Package Body Material":"GLASS","Rep Pk Reverse Voltage-Max":"50 V","Configuration":"SINGLE","Power Dissipation Limit-Max":"5 W","Non-rep Pk Forward Current-Max":"125 A","Average Forward Current-Max":"3 A","Surface Mount":"Yes","Case Connection":"ISOLATED","Mfr Package Description":"HERMETIC SEALED, GLASS, MEL...
1371 Bytes - 02:47:08, 05 May 2024
Microsemi.com/JANTX1N5807
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"5\u00b5A @ 50V","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Family":"Diodes, Rectifiers - Single","Standard Package":"1","Series":"Military, MIL-PRF-19500\/477","Capacitance @ Vr, F":"60pF @ 10V, 1MHz","Supplier Device Package":"*","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,9,11","Current - Average Rectified (Io)":"3A","Operating Temperature - Junction":"-65\u00b0C ~ 175\u00b0C","Package \...
1541 Bytes - 02:47:08, 05 May 2024
Microsemi.com/JANTX1N5807CBUS
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"HERMETIC SEALED, GLASS, D-5B, 2 PIN","Terminal Form":"WRAP AROUND","Package Style":"LONG FORM","Average Forward Current-Max":"3 A","Number of Phases":"1","Diode Element Material":"SILICON","Application":"ULTRA FAST RECOVERY","Number of Elements":"1","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"END","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","Con...
1317 Bytes - 02:47:08, 05 May 2024
Microsemi.com/JANTX1N5807R
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Terminal Form":"WIRE","Package Style":"LONG FORM","Number of Phases":"1","Diode Element Material":"SILICON","Application":"FAST RECOVERY","Average Forward Current-Max":"6 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","Reverse Recovery Time-Max":"0.0300 us","Number of El...
1200 Bytes - 02:47:08, 05 May 2024
Microsemi.com/JANTX1N5807URS
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"5\u00b5A @ 50V","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Family":"Diodes, Rectifiers - Single","Standard Package":"100","Series":"Military, MIL-PRF-19500\/477","Capacitance @ Vr, F":"60pF @ 10V, 1MHz","Supplier Device Package":"B, SQ-MELF","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,09,11 US\/URS","Current - Average Rectified (Io)":"3A","Operating Temperature - Junction":"*","Package \/ ...
1570 Bytes - 02:47:08, 05 May 2024
Microsemi.com/JANTX1N5807US
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"5\u00b5A @ 50V","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Family":"Diodes, Rectifiers - Single","Standard Package":"1","Series":"Military, MIL-PRF-19500\/477","Capacitance @ Vr, F":"60pF @ 10V, 1MHz","Supplier Device Package":"B, SQ-MELF","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,09,11 US\/URS","Current - Average Rectified (Io)":"3A","Operating Temperature - Junction":"-65\u00b0C ~ 175\...
1582 Bytes - 02:47:08, 05 May 2024
Microsemi.com/JANTXV1N5807
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"5\u00b5A @ 50V","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Family":"Diodes, Rectifiers - Single","Standard Package":"1","Series":"Military, MIL-PRF-19500\/477","Capacitance @ Vr, F":"65pF @ 10V, 1MHz","Supplier Device Package":"*","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,9,11","Current - Average Rectified (Io)":"3A","Operating Temperature - Junction":"-65\u00b0C ~ 175\u00b0C","Package \...
1547 Bytes - 02:47:08, 05 May 2024
Microsemi.com/JANTXV1N5807CBUS
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"HERMETIC SEALED, GLASS, D-5B, 2 PIN","Terminal Form":"WRAP AROUND","Package Style":"LONG FORM","Average Forward Current-Max":"3 A","Number of Phases":"1","Diode Element Material":"SILICON","Application":"ULTRA FAST RECOVERY","Number of Elements":"1","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"END","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","Con...
1322 Bytes - 02:47:08, 05 May 2024
Microsemi.com/JANTXV1N5807R
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Terminal Form":"WIRE","Package Style":"LONG FORM","Number of Phases":"1","Diode Element Material":"SILICON","Application":"FAST RECOVERY","Average Forward Current-Max":"6 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","Reverse Recovery Time-Max":"0.0300 us","Number of El...
1204 Bytes - 02:47:08, 05 May 2024
Microsemi.com/JANTXV1N5807URS
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"5\u00b5A @ 50V","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Family":"Diodes, Rectifiers - Single","Standard Package":"100","Series":"Military, MIL-PRF-19500\/477","Capacitance @ Vr, F":"60pF @ 10V, 1MHz","Supplier Device Package":"B, SQ-MELF","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,09,11 US\/URS","Current - Average Rectified (Io)":"3A","Operating Temperature - Junction":"-65\u00b0C ~ 17...
1598 Bytes - 02:47:08, 05 May 2024
Microsemi.com/JANTXV1N5807US
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"5\u00b5A @ 50V","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Family":"Diodes, Rectifiers - Single","Standard Package":"1","Series":"Military, MIL-PRF-19500\/477","Capacitance @ Vr, F":"60pF @ 10V, 1MHz","Supplier Device Package":"D-5B","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,09,11 US\/URS","Current - Average Rectified (Io)":"3A","Operating Temperature - Junction":"-65\u00b0C ~ 175\u00b0C...
1580 Bytes - 02:47:08, 05 May 2024
Microsemi.com/MV1N5807U4
{"Status":"ACTIVE","Terminal Finish":"GOLD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Package Style":"CHIP CARRIER","Rep Pk Reverse Voltage-Max":"50 V","Number of Phases":"1","Diode Element Material":"SILICON","Average Forward Current-Max":"6 A","Application":"GENERAL PURPOSE","Number of Elements":"1","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"BOTTOM","Diode Type":"RECTIFIER DIODE","Package Shape":"RECT...
1268 Bytes - 02:47:08, 05 May 2024
Microsemi.com/MV1N5807U4M
{"Status":"ACTIVE","Terminal Finish":"GOLD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-2","Terminal Form":"NO LEAD","Package Style":"CHIP CARRIER","Rep Pk Reverse Voltage-Max":"50 V","Number of Phases":"1","Diode Element Material":"SILICON","Average Forward Current-Max":"6 A","Application":"GENERAL PURPOSE","Number of Elements":"1","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"BOTTOM","Diode Type":"RECTIFIER DIODE","Package Shape":"RECT...
1273 Bytes - 02:47:08, 05 May 2024
Microsemi.com/MX1N5807U4
{"Status":"ACTIVE","Terminal Finish":"GOLD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Package Style":"CHIP CARRIER","Rep Pk Reverse Voltage-Max":"50 V","Number of Phases":"1","Diode Element Material":"SILICON","Average Forward Current-Max":"6 A","Application":"GENERAL PURPOSE","Number of Elements":"1","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"BOTTOM","Diode Type":"RECTIFIER DIODE","Package Shape":"RECT...
1176 Bytes - 02:47:08, 05 May 2024