{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"DEPLETION","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","Number of Elements":"1"}...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"DEPLETION","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","Number of Elements":"1"}...

{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"50p","I(G) Max. (A)":"10m","Absolute Max. Power Diss. (W)":"500m","I(GSS) Max. (A)":"10n","Package":"TO-5","g(fs) Min. (S) Trans. conduct.":"1.0m","Military":"N","@V(GS) (V) (Test Condition)":"10"}...

{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"10p","I(G) Max. (A)":"10m","Absolute Max. Power Diss. (W)":"500m","I(DSS) Max. (A)":"15m","I(GSS) Max. (A)":"10n","I(DSS) Min. (A)":"1.0m","g(fs) Min. (S) Trans. conduct.":"2.2m","Package":"TO-5","Military":"N","@V(GS) (V) (Test Condition)":"8.0","g(fs) Max, (S) Trans. conduct,":"5.0m"}...