Advancedsemiconductor.com/2N3866
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3 pF","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"500 MHz","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.4000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"RO...
1338 Bytes - 16:36:23, 04 May 2024
Advancedsemiconductor.com/2N3866A
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3 pF","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"800 MHz","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.4000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"RO...
1344 Bytes - 16:36:23, 04 May 2024
Centralsemi.com/2N3866
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"400mA","Online Catalog":"NPN RF Transistors","Noise Figure (dB Typ @ f)":"-","Transistor Type":"NPN","Family":"RF Transistors (BJT)","Product Photos":"TO-205AD TO-39-3 2N3019","Frequency - Transition":"500MHz","Series":"-","Standard Package":"500","Voltage - Collector Emitter Breakdown (Max)":"30V","Supplier Device Package":"TO-39","Packaging":"Bulk","Datasheets":"2N3866(A)","Power - Max":"5W","RoHS Information":"RoHS Declaratio...
1741 Bytes - 16:36:23, 04 May 2024
Centralsemi.com/2N3866A
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3 pF","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED PACKAGE-3","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"800 MHz","Highest Frequency Band":"HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.4000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor...
1365 Bytes - 16:36:23, 04 May 2024
Centralsemi.com/2N3866LEADFREE
{"Terminal Finish":"MATTE TIN (315)","Transistor Polarity":"NPN","Terminal Form":"WIRE","Collector Current-Max (IC)":"0.4000 A","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Collector-emitter Voltage-Max":"30 V","Terminal Position":"BOTTOM","Transistor Application":"AMPLIFIER","Collector-base Capacitance-Max":"3 pF","Mfr Package Descrip...
1458 Bytes - 16:36:23, 04 May 2024
Centralsemi.com/2N3866 PBFREE
{"Collector Current (DC) ":"0.4(A)","Emitter-Base Voltage":"3.5(V)","Power Dissipation":"5(W)","Operating Temp Range":"-65C to 200C","Package Type":"TO-39","Collector-Base Voltage":"55(V)","DC Current Gain":"10","Configuration":"Single","Type":"NPN","Maximum Transition Frequency":"500(MIN)","Number of Elements":"1"}...
1380 Bytes - 16:36:23, 04 May 2024
Dla.mil/2N3866A+JAN
{"Absolute Max. Power Diss. (W)":"5.0","V(BR)CBO (V)":"55","h(FE) Min. Static Current Gain":"25","I(C) Abs.(A) Collector Current":"400m","h(FE) Max. Current gain.":"200","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100u","@V(CBO) (V) (Test Condition)":"55","Package":"TO-39","@V(CE) (V) (Test Condition)":"15","f(T) Min. (Hz) Transition Freq":"800M","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JAN2N3866A","@I(C) (A) (Test Condition)":"50m","Semiconductor Material":"Silicon","C(obo) (Max) (F)":...
1053 Bytes - 16:36:23, 04 May 2024
Dla.mil/2N3866A+JANS
{"Absolute Max. Power Diss. (W)":"5.0","V(BR)CBO (V)":"55","h(FE) Min. Static Current Gain":"25","I(C) Abs.(A) Collector Current":"400m","h(FE) Max. Current gain.":"200","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100u","@V(CBO) (V) (Test Condition)":"55","Package":"TO-39","@V(CE) (V) (Test Condition)":"15","f(T) Min. (Hz) Transition Freq":"800M","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JANS2N3866A","@I(C) (A) (Test Condition)":"50m","Semiconductor Material":"Silicon","C(obo) (Max) (F)"...
1060 Bytes - 16:36:23, 04 May 2024
Dla.mil/2N3866A+JANTX
{"Absolute Max. Power Diss. (W)":"5.0","V(BR)CBO (V)":"55","h(FE) Min. Static Current Gain":"25","I(C) Abs.(A) Collector Current":"400m","h(FE) Max. Current gain.":"200","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100u","@V(CBO) (V) (Test Condition)":"55","Package":"TO-39","@V(CE) (V) (Test Condition)":"15","f(T) Min. (Hz) Transition Freq":"800M","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JANTX2N3866A","@I(C) (A) (Test Condition)":"50m","Semiconductor Material":"Silicon","C(obo) (Max) (F)...
1066 Bytes - 16:36:23, 04 May 2024
Dla.mil/2N3866A+JANTXV
{"Absolute Max. Power Diss. (W)":"5.0","V(BR)CBO (V)":"55","h(FE) Min. Static Current Gain":"25","I(C) Abs.(A) Collector Current":"400m","h(FE) Max. Current gain.":"200","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100u","@V(CBO) (V) (Test Condition)":"55","Package":"TO-39","@V(CE) (V) (Test Condition)":"15","f(T) Min. (Hz) Transition Freq":"800M","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JANTXV2N3866A","@I(C) (A) (Test Condition)":"50m","Semiconductor Material":"Silicon","C(obo) (Max) (F...
1072 Bytes - 16:36:23, 04 May 2024
Dla.mil/2N3866+JAN
{"Absolute Max. Power Diss. (W)":"5.0","V(BR)CBO (V)":"55","h(FE) Min. Static Current Gain":"10","I(C) Abs.(A) Collector Current":"400m","h(FE) Max. Current gain.":"100","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"55","Package":"TO-39","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"500M","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JAN2N3866","@I(C) (A) (Test Condition)":"50m","C(obo) (Max) (F)":"3.0p"}...
1014 Bytes - 16:36:23, 04 May 2024
Dla.mil/2N3866+JANS
{"Absolute Max. Power Diss. (W)":"5.0","V(BR)CBO (V)":"55","h(FE) Min. Static Current Gain":"10","I(C) Abs.(A) Collector Current":"400m","h(FE) Max. Current gain.":"100","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"55","Package":"TO-39","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"500M","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JANS2N3866","@I(C) (A) (Test Condition)":"50m","C(obo) (Max) (F)":"3.0p"}...
1020 Bytes - 16:36:23, 04 May 2024
Dla.mil/2N3866+JANTX
{"Absolute Max. Power Diss. (W)":"5.0","V(BR)CBO (V)":"55","h(FE) Min. Static Current Gain":"10","I(C) Abs.(A) Collector Current":"400m","h(FE) Max. Current gain.":"100","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"55","Package":"TO-39","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"500M","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JANTX2N3866","@I(C) (A) (Test Condition)":"50m","C(obo) (Max) (F)":"3.0p"}...
1026 Bytes - 16:36:23, 04 May 2024
Dla.mil/2N3866+JANTXV
{"Absolute Max. Power Diss. (W)":"5.0","V(BR)CBO (V)":"55","h(FE) Min. Static Current Gain":"10","I(C) Abs.(A) Collector Current":"400m","h(FE) Max. Current gain.":"100","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"55","Package":"TO-39","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"500M","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JANTXV2N3866","@I(C) (A) (Test Condition)":"50m","C(obo) (Max) (F)":"3.0p"}...
1032 Bytes - 16:36:23, 04 May 2024
Microsemi.com/2N3866
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"400mA","Online Catalog":"NPN Transistors","Transistor Type":"NPN","Frequency - Transition":"-","Product Photos":"TO-39","Vce Saturation (Max) @ Ib, Ic":"1V @ 10mA, 100mA","Current - Collector Cutoff (Max)":"20\u00b5A","Series":"-","Standard Package":"1","Voltage - Collector Emitter Breakdown (Max)":"30V","Supplier Device Package":"TO-205AD","Packaging":"Bulk","Datasheets":"2N3866(A)","Power - Max":"1W","Family":"Transistors (BJT...
1773 Bytes - 16:36:23, 04 May 2024
Microsemi.com/2N3866A
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"400mA","Noise Figure (dB Typ @ f)":"-","Transistor Type":"NPN","Frequency - Transition":"400MHz","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"1","Voltage - Collector Emitter Breakdown (Max)":"30V","Supplier Device Package":"TO-39","Packaging":"Bulk","Datasheets":"2N3866(A)","Power - Max":"1W","Gain":"-","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Mounting Type":"Through Hole","DC Current Gain (hFE) (Min)...
1376 Bytes - 16:36:23, 04 May 2024
Microsemi.com/2N3866AJANTX
{"Collector Current (DC) ":"0.4 A","Transistor Polarity":"NPN","Collector-Emitter Voltage":"30 V","Rad Hardened":"No","Mounting":"Through Hole","Emitter-Base Voltage":"3.5 V","Category ":"Bipolar RF","Operating Temperature Classification":"Military","Power Dissipation":"1 W","Operating Temp Range":"-65C to 200C","Frequency":"800 MHz","Package Type":"TO-39","Collector-Base Voltage":"60 V","DC Current Gain":"25","Pin Count":"3","Number of Elements":"1"}...
1467 Bytes - 16:36:23, 04 May 2024
Microsemi.com/2N3866AUB
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC, CERSOT-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.4000 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Transis...
1418 Bytes - 16:36:23, 04 May 2024
Microsemi.com/2N3866UB
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC, CERSOT-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.4000 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Transistor Element Material":"SILICO...
1384 Bytes - 16:36:23, 04 May 2024
Microsemi.com/JAN2N3866A
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.4000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Tra...
1366 Bytes - 16:36:23, 04 May 2024
Microsemi.com/JAN2N3866AUB
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC, CERSOT-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.4000 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Transistor Element Material":"SILICO...
1408 Bytes - 16:36:23, 04 May 2024
Microsemi.com/JAN2N3866UB
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"UB-3 PIN","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.4000 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DU...
1378 Bytes - 16:36:23, 04 May 2024
Microsemi.com/JANJ2N3866A
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"WIRE","Number of Terminals":"3","Collector-emitter Voltage-Max":"30 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.4000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Type":"RF SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Package Style":"CYLINDRICAL","Number of Elements":"1"}...
1187 Bytes - 16:36:23, 04 May 2024
Microsemi.com/JANS2N3866
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.4000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Number of Terminals":"3","Number of Elements":"1"}...
1183 Bytes - 16:36:23, 04 May 2024
Microsemi.com/JANS2N3866A
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.4000 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Posi...
1396 Bytes - 16:36:23, 04 May 2024
Microsemi.com/JANS2N3866AUB
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC, CERSOT-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.4000 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Transis...
1441 Bytes - 16:36:23, 04 May 2024
Microsemi.com/JANS2N3866UB
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC, CERSOT-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.4000 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Transis...
1436 Bytes - 16:36:23, 04 May 2024
Microsemi.com/JANTX2N3866
{"Collector Current (DC) ":"0.4(A)","Emitter-Base Voltage":"3.5(V)","Power Dissipation":"1(W)","Operating Temp Range":"-65C to 200C","Package Type":"TO-39","Collector-Base Voltage":"60(V)","Output Power":"1(MIN)(W)","Configuration":"Single","Type":"NPN","Maximum Transition Frequency":"800(TYP)","Number of Elements":"1"}...
1331 Bytes - 16:36:23, 04 May 2024
Microsemi.com/JANTX2N3866A
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.4000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Tra...
1379 Bytes - 16:36:23, 04 May 2024
Microsemi.com/JANTX2N3866AUB
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"UB-3 PIN","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.4000 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DU...
1392 Bytes - 16:36:23, 04 May 2024
Microsemi.com/JANTX2N3866UB
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"UB-3 PIN","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.4000 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DU...
1387 Bytes - 16:36:23, 04 May 2024
Microsemi.com/JANTXV2N3866
{"Factory Pack Quantity":"100","Brand":"Microsemi","Product Category":"Bipolar Transistors - BJT","RoHS":"No","Manufacturer":"Microsemi"}...
935 Bytes - 16:36:23, 04 May 2024
Microsemi.com/JANTXV2N3866A
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.4000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Tra...
1384 Bytes - 16:36:23, 04 May 2024
Microsemi.com/JANTXV2N3866AUB
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC, CERSOT-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.4000 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Transistor Element Material":"SILICO...
1426 Bytes - 16:36:23, 04 May 2024
Microsemi.com/JANTXV2N3866UB
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC, CERSOT-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.4000 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Transistor Element Material":"SILICO...
1422 Bytes - 16:36:23, 04 May 2024
N_a/2N3866(A)
{"Category":"NPN Transistor, Transistor","Amps":"0.4A","MHz":"400 MHz","Volts":"55V"}...
532 Bytes - 16:36:23, 04 May 2024
Semicoa.com/2N3866A
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.4000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Tra...
1332 Bytes - 16:36:23, 04 May 2024
Semicoa.com/2N3866AJ
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.4000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Pack...
1309 Bytes - 16:36:23, 04 May 2024
Semicoa.com/2N3866AJS
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.4000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Pack...
1312 Bytes - 16:36:23, 04 May 2024
Semicoa.com/2N3866AJSF
{"Status":"ACTIVE","Transistor Type":"RF SMALL SIGNAL"}...
707 Bytes - 16:36:23, 04 May 2024
Semicoa.com/2N3866AJSR
{"Status":"ACTIVE","Transistor Type":"RF SMALL SIGNAL"}...
703 Bytes - 16:36:23, 04 May 2024
Semicoa.com/2N3866AJV
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.4000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Pack...
1313 Bytes - 16:36:23, 04 May 2024
Semicoa.com/2N3866AJX
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.4000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Pack...
1314 Bytes - 16:36:23, 04 May 2024
Semicoa.com/2N3866AUB
{"Status":"DISCONTINUED","Collector-base Capacitance-Max":"3.5 pF","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC, CERSOT-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.4000 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Transistor Element Material":"...
1380 Bytes - 16:36:23, 04 May 2024
Semicoa.com/2N3866AUBJ
{"Status":"ACTIVE","Transistor Type":"RF SMALL SIGNAL"}...
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Semicoa.com/2N3866AUBJS
{"Status":"ACTIVE","Transistor Type":"RF SMALL SIGNAL"}...
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Semicoa.com/2N3866AUBJSF
{"Status":"ACTIVE","Transistor Type":"RF SMALL SIGNAL"}...
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Semicoa.com/2N3866AUBJSR
{"Status":"ACTIVE","Transistor Type":"RF SMALL SIGNAL"}...
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