Centralsemi.com/2N4449
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"40","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-46, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Turn-off Time-Max (toff)":"12 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"500 MHz","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Trans...
1295 Bytes - 01:11:13, 01 May 2024
Crystalonics.com/2N4449
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"CASE 26-03, TO-46, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3600 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"12 ns","Turn-off Time-Max (toff)":"18 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package ...
1315 Bytes - 01:11:13, 01 May 2024
Crystalonics.com/JAN2N4449
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Turn-off Time-Max (toff)":"18 ns","Package Body Material":"METAL","Mfr Package Description":"CASE 26-03, TO-46, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"12 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration...
1306 Bytes - 01:11:13, 01 May 2024
Crystalonics.com/JTX2N4449
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Turn-off Time-Max (toff)":"18 ns","Package Body Material":"METAL","Mfr Package Description":"CASE 26-03, TO-46, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"12 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration...
1302 Bytes - 01:11:13, 01 May 2024
Crystalonics.com/JTXV2N4449
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Turn-off Time-Max (toff)":"18 ns","Package Body Material":"METAL","Mfr Package Description":"CASE 26-03, TO-46, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"12 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration...
1309 Bytes - 01:11:13, 01 May 2024
Dla.mil/2N4449+JAN
{"@I(C) (A) (Test Condition)":"10m","I(CBO) Max. (A)":".40u","Absolute Max. Power Diss. (W)":"300m","I(C) Abs.(A) Collector Current":"200m","@V(CE) (V) (Test Condition)":".35","f(T) Min. (Hz) Transition Freq":"500M","V(BR)CEO (V)":"15","Package":"TO-46","h(FE) Min. Static Current Gain":"40","Military":"Y","Mil Number":"JAN2N4449","C(obo) (Max) (F)":"4p"}...
885 Bytes - 01:11:13, 01 May 2024
Dla.mil/2N4449+JANTX
{"@I(C) (A) (Test Condition)":"10m","I(CBO) Max. (A)":".40u","Absolute Max. Power Diss. (W)":"300m","I(C) Abs.(A) Collector Current":"200m","@V(CE) (V) (Test Condition)":".35","f(T) Min. (Hz) Transition Freq":"500M","V(BR)CEO (V)":"15","Package":"TO-46","h(FE) Min. Static Current Gain":"40","Military":"Y","Mil Number":"JANTX2N4449","C(obo) (Max) (F)":"4p"}...
898 Bytes - 01:11:13, 01 May 2024
Dla.mil/2N4449+JANTXV
{"@I(C) (A) (Test Condition)":"10m","I(CBO) Max. (A)":".40u","Absolute Max. Power Diss. (W)":"300m","I(C) Abs.(A) Collector Current":"200m","@V(CE) (V) (Test Condition)":".35","f(T) Min. (Hz) Transition Freq":"500M","V(BR)CEO (V)":"15","Package":"TO-46","h(FE) Min. Static Current Gain":"40","Military":"Y","Mil Number":"JANTXV2N4449","C(obo) (Max) (F)":"4p"}...
903 Bytes - 01:11:13, 01 May 2024
Microchip.com/TC52N4449ECT
{"Terminal Finish":"MATTE TIN","Terminal Pitch":"0.9500 mm","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Supply Voltage-Nom (Vsup)":"2 V","Temperature Grade":"INDUSTRIAL","Analog IC - Other Type":"POWER SUPPLY SUPPORT CKT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"-40 Cel","Package Body Material":"PLASTIC\/EPOXY","Number of Channels":"2","Number of Functions":"1","EU RoHS Compliant":"Yes","Supply Voltage-Max (Vsup)":"10 V","China RoHS...
1492 Bytes - 01:11:13, 01 May 2024
Microchip.com/TC52N4449ECTTR
{"Terminal Finish":"MATTE TIN","Terminal Pitch":"0.9500 mm","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Supply Voltage-Nom (Vsup)":"2 V","Temperature Grade":"INDUSTRIAL","Analog IC - Other Type":"POWER SUPPLY SUPPORT CKT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"-40 Cel","Package Body Material":"PLASTIC\/EPOXY","Number of Channels":"2","Number of Functions":"1","EU RoHS Compliant":"Yes","Supply Voltage-Max (Vsup)":"10 V","China RoHS...
1504 Bytes - 01:11:13, 01 May 2024
Microsemi.com/2N4449
{"Terminal Finish":"TIN LEAD","Transistor Polarity":"NPN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Collector Current-Max (IC)":"0.2000 A","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Turn-off Time-Max (toff)":"18 ns","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Turn-on Time-Max (ton)":"12 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Case Connection...
1384 Bytes - 01:11:13, 01 May 2024
Microsemi.com/2N4449JANTX
{"Transistor Polarity":"NPN","DC Current Gain":"40","Collector-Emitter Voltage":"15 V","Mounting":"Through Hole","Emitter-Base Voltage":"4.5 V","Category ":"Bipolar Power","DC Current Gain (Min)":"40","Operating Temperature Classification":"Military","Power Dissipation":"0.6 W","Operating Temp Range":"-65C to 200C","Package Type":"TO-46","Collector-Base Voltage":"40 V","Rad Hardened":"No","Pin Count":"3","Number of Elements":"1"}...
1439 Bytes - 01:11:13, 01 May 2024
Microsemi.com/2N4449U
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"SURFACE MOUNT PACKAGE-6","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.6000 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"12 ns","Turn-off Time-Max (toff)":"18 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Pos...
1368 Bytes - 01:11:13, 01 May 2024
Microsemi.com/2N4449UA
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"SURFACE MOUNT PACKAGE-4","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"12 ns","Turn-off Time-Max (toff)":"18 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Pos...
1371 Bytes - 01:11:13, 01 May 2024
Microsemi.com/2N4449UB
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"SURFACE MOUNT PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.4000 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"12 ns","Turn-off Time-Max (toff)":"18 ns","Collector-emitter Voltage-Max":"20 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Pos...
1373 Bytes - 01:11:13, 01 May 2024
Microsemi.com/JAN2N4449
{"Terminal Finish":"TIN LEAD","Transistor Polarity":"NPN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3600 W","Collector Current-Max (IC)":"0.2000 A","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Turn-off Time-Max (toff)":"18 ns","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Turn-on Time-Max (ton)":"12 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Case Connection...
1402 Bytes - 01:11:13, 01 May 2024
Microsemi.com/JAN2N4449U
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Turn-off Time-Max (toff)":"18 ns","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"SURFACE MOUNT PACKAGE-6","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.6000 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"12 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Pol...
1357 Bytes - 01:11:13, 01 May 2024
Microsemi.com/JAN2N4449UA
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Turn-off Time-Max (toff)":"18 ns","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"SURFACE MOUNT PACKAGE-4","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"12 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Pol...
1365 Bytes - 01:11:13, 01 May 2024
Microsemi.com/JANS2N4449
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-46, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3600 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"12 ns","Turn-off Time-Max (toff)":"18 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarit...
1360 Bytes - 01:11:13, 01 May 2024
Microsemi.com/JANTX2N4449
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-46, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3600 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"12 ns","Turn-off Time-Max (toff)":"18 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarit...
1363 Bytes - 01:11:13, 01 May 2024
Microsemi.com/JANTX2N4449U
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Turn-off Time-Max (toff)":"18 ns","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"SURFACE MOUNT PACKAGE-6","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.6000 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"12 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Pol...
1369 Bytes - 01:11:13, 01 May 2024
Microsemi.com/JANTX2N4449UA
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Turn-off Time-Max (toff)":"18 ns","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"SURFACE MOUNT PACKAGE-4","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"12 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Pol...
1374 Bytes - 01:11:13, 01 May 2024
Microsemi.com/JANTXV2N4449
{"Terminal Finish":"TIN LEAD","Transistor Polarity":"NPN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3600 W","Collector Current-Max (IC)":"0.2000 A","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Turn-off Time-Max (toff)":"18 ns","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Turn-on Time-Max (ton)":"12 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Case Connection...
1420 Bytes - 01:11:13, 01 May 2024
Microsemi.com/JANTXV2N4449U
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Turn-off Time-Max (toff)":"18 ns","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"SURFACE MOUNT PACKAGE-6","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.6000 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"12 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Pol...
1377 Bytes - 01:11:13, 01 May 2024
Microsemi.com/JANTXV2N4449UA
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Turn-off Time-Max (toff)":"18 ns","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"SURFACE MOUNT PACKAGE-4","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"12 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Pol...
1381 Bytes - 01:11:13, 01 May 2024
Semicoa.com/2N4449
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3600 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"12 ns","Turn-off Time-Max (toff)":"18 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Pack...
1303 Bytes - 01:11:13, 01 May 2024
Semicoa.com/2N4449J
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Turn-off Time-Max (toff)":"18 ns","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3600 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"12 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configura...
1280 Bytes - 01:11:13, 01 May 2024
Semicoa.com/2N4449JS
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Turn-off Time-Max (toff)":"18 ns","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3600 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"12 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configura...
1284 Bytes - 01:11:13, 01 May 2024
Semicoa.com/2N4449JSF
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...
711 Bytes - 01:11:13, 01 May 2024
Semicoa.com/2N4449JSR
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...
710 Bytes - 01:11:13, 01 May 2024
Semicoa.com/2N4449JV
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Turn-off Time-Max (toff)":"18 ns","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3600 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"12 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configura...
1285 Bytes - 01:11:13, 01 May 2024
Semicoa.com/2N4449JX
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Turn-off Time-Max (toff)":"18 ns","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3600 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"12 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configura...
1284 Bytes - 01:11:13, 01 May 2024
Semicoa.com/JAN2N4449
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3600 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Num...
1221 Bytes - 01:11:13, 01 May 2024
Semicoa.com/JANTX2N4449
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3600 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Num...
1236 Bytes - 01:11:13, 01 May 2024
Semicoa.com/JANTXV2N4449
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3600 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Num...
1242 Bytes - 01:11:13, 01 May 2024
Various/2N4449
"VMS, 2N4449, Silicon, NPN, 300mW, 40V, 15V, 4V, 200mA, 200°C, 500MHz, 4, 40MIN, F, TO46"...
522 Bytes - 01:11:13, 01 May 2024