{"Status":"Discontinued","C(iss) Max. (F)":"10p","Absolute Max. Power Diss. (W)":"310m","I(GSS) Max. (A)":"1.0n","I(DSS) Min. (A)":"50m","V(BR)GSS (V)":"30","Package":"Chip","Military":"N","r(DS)on Max. (Ohms)":"30"}...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3100 W","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Operating Mode":"DEPLETION","Drain-source On Resistance-Max":"30 ohm","Feedback Cap-Max (Crss)":"4 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shap...

{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"JFETs (Junction Field Effect)","Current - Drain (Idss) @ Vds (Vgs=0)":"50mA @ 20V","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Voltage - Cutoff (VGS off) @ Id":"-","Current Drain (Id) - Max":"-","FET Type":"N-Channel","Datasheets":"2N5638","Power - Max":"350mW","Standard Package":"2,000","Resistance - RDS(On)":"30 Ohm",...

{"Category":"Discrete Semiconductor Products","Packaging":"Tape & Reel (TR)","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"JFETs (Junction Field Effect)","Current - Drain (Idss) @ Vds (Vgs=0)":"50mA @ 20V","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads","Supplier Device Package":"TO-92-3","Voltage - Cutoff (VGS off) @ Id":"-","Current Drain (Id) - Max":"-","FET Type":"N-Channel","Datasheets":"2N5638","Power - Max":"350mW","Standard Package":"2,000","Resist...

{"Category":"Discrete Semiconductor Products","PCN Obsolescence\/ EOL":"Multiple Devices 30\/Jun\/2006","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"JFETs (Junction Field Effect)","Current - Drain (Idss) @ Vds (Vgs=0)":"50mA @ 20V","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads","Supplier Device Package":"TO-92-3","Voltage - Cutoff (VGS off) @ Id":"-","Packaging":"Tape & Reel (TR)","FET Type":"N-Channel","Datasheets":"2N5638, 5639","Power - Max":"310mW","...

{"Category":"Discrete Semiconductor Products","PCN Obsolescence\/ EOL":"Multiple Devices 30\/Jun\/2006","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"JFETs (Junction Field Effect)","Current - Drain (Idss) @ Vds (Vgs=0)":"50mA @ 20V","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads","Supplier Device Package":"TO-92-3","Voltage - Cutoff (VGS off) @ Id":"-","Packaging":"Tape & Reel (TR)","FET Type":"N-Channel","Datasheets":"2N5638, 5639","Power - Max":"310mW","...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"DEPLETION","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Drain-source On Resistance-Max":"30 ohm","Feedback Cap-Max (Crss)":"4 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SI...

{"@V(DS) (V) (Test Condition)":"0","C(iss) Max. (F)":"10p","I(GSS) Max. (A)":"10n","I(DSS) Min. (A)":"50m","V(BR)GSS (V)":"30","@I(D) (A) (Test Condition)":"1n","Package":"TO-226AA","Military":"N","V(GS)off Max. (V)":"12","r(DS)on Max. (Ohms)":"30"}...