{"Status":"ACTIVE","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Number of Terminals":"2","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.2500 ohm","Package Style":"FLANGE MOUNT","DS Breakdown Voltage-Min":"60 V","N...