{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-116, 14 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"IN-LINE","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"60 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"200 MHz","Collector Current-Max (IC)":"0.6000 A","Terminal Position":"DUAL","Transistor Polarity":"PNP","Package Shape":"RECTANGULAR","Configuration":"SEPARATE, 4 ELEMENTS","Transistor Type":"GENERAL PURPOS...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CASE 632-08, 14 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"IN-LINE","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Number of Terminals":"14"}...

{"@I(C) (A) (Test Condition)":"1.0m","Semiconductor Material":"Silicon","Number of Devices":"4","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"200M","I(C) Abs.(A) Collector Current":"600m","P(D) Max.(W) Power Dissipation":"1.5","V(BR)CEO (V)":"60","Package":"TO-116","h(FE) Min. Static Current Gain":"100","Military":"Y","Mil Number":"JAN2N6987"}...

{"@I(C) (A) (Test Condition)":"1.0m","Semiconductor Material":"Silicon","Number of Devices":"4","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"200M","I(C) Abs.(A) Collector Current":"600m","P(D) Max.(W) Power Dissipation":"1.5","V(BR)CEO (V)":"60","Package":"TO-116","h(FE) Min. Static Current Gain":"100","Military":"Y","Mil Number":"JANTX2N6987"}...

{"@I(C) (A) (Test Condition)":"1.0m","Semiconductor Material":"Silicon","Number of Devices":"4","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"200M","I(C) Abs.(A) Collector Current":"600m","P(D) Max.(W) Power Dissipation":"1.5","V(BR)CEO (V)":"60","Package":"TO-116","h(FE) Min. Static Current Gain":"100","Military":"Y","Mil Number":"JANTXV2N6987"}...

{"@I(C) (A) (Test Condition)":"1.0m","Semiconductor Material":"Silicon","Number of Devices":"4","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"200M","I(C) Abs.(A) Collector Current":"600m","P(D) Max.(W) Power Dissipation":"1.5","V(BR)CEO (V)":"60","Package":"QCC-N","h(FE) Min. Static Current Gain":"100","Military":"Y","Mil Number":"JAN2N6987U"}...

{"@I(C) (A) (Test Condition)":"1.0m","Semiconductor Material":"Silicon","Number of Devices":"4","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"200M","I(C) Abs.(A) Collector Current":"600m","P(D) Max.(W) Power Dissipation":"1.5","V(BR)CEO (V)":"60","Package":"QCC-N","h(FE) Min. Static Current Gain":"100","Military":"Y","Mil Number":"JANTX2N6987U"}...

{"@I(C) (A) (Test Condition)":"1.0m","Semiconductor Material":"Silicon","Number of Devices":"4","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"200M","I(C) Abs.(A) Collector Current":"600m","P(D) Max.(W) Power Dissipation":"1.5","V(BR)CEO (V)":"60","Package":"QCC-N","h(FE) Min. Static Current Gain":"100","Military":"Y","Mil Number":"JANTXV2N6987U"}...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","Online Catalog":"PNP Transistor Arrays","Transistor Type":"4 PNP (Quad)","Frequency - Transition":"-","Product Photos":"2N6987","Vce Saturation (Max) @ Ib, Ic":"1.6V @ 50mA, 500mA","Current - Collector Cutoff (Max)":"10\u00b5A (ICBO)","Series":"-","Standard Package":"1","Voltage - Collector Emitter Breakdown (Max)":"60V","Supplier Device Package":"TO-116","Packaging":"Bulk","Datasheets":"2N6987(U),2N6988","Power - Max":"...

{"Collector Current (DC) ":"0.6 A","Transistor Polarity":"PNP","Collector Current (DC) (Max)":"0.6 A","Collector-Emitter Voltage":"60 V","Mounting":"Through Hole","Emitter-Base Voltage":"5 V","Category ":"Bipolar Power","DC Current Gain (Min)":"100","Operating Temperature Classification":"Military","Power Dissipation":"1.5 W","Operating Temp Range":"-65C to 200C","Package Type":"TO-116","Collector-Base Voltage":"60 V","Rad Hardened":"No","DC Current Gain":"75","Pin Count":"14","Number of Elements":"4"}...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"LCC-20","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"1 W","Package Style":"CHIP CARRIER","DC Current Gain-Min (hFE)":"50","Collector-emitter Voltage-Max":"60 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.6000 A","Transistor Element Material":"SILICON","Terminal Position":"QUAD","Transistor Polarity":"PNP","Package Shape":"RECTANGULAR","Num...

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{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"LCC-20","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"1 W","Package Style":"CHIP CARRIER","DC Current Gain-Min (hFE)":"50","Collector-emitter Voltage-Max":"60 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.6000 A","Transistor Element Material":"SILICON","Terminal Position":"QUAD","Transistor Polarity":"PNP","Package Shape":"RECTANGULAR","Num...

{"Status":"ACTIVE","Package Body Material":"CERAMIC, GLASS-SEALED","Mfr Package Description":"CERDIP-14","Terminal Form":"THROUGH-HOLE","Package Style":"IN-LINE","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"60 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.6000 A","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"PNP","Package Shape":"RECTANGULAR","Configuration":"SEPARATE, 4 ELEMENTS","Transistor Type":"GENERAL PURPOSE P...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, GLASS-SEALED","Mfr Package Description":"HERMETIC SEALED, CERDIP-14","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.5 W","Package Style":"IN-LINE","DC Current Gain-Min (hFE)":"50","Collector-emitter Voltage-Max":"60 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.6000 A","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"PNP","Package Shape":"REC...

{"Terminal Finish":"TIN LEAD","Transistor Polarity":"PNP","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"1 W","Collector Current-Max (IC)":"0.6000 A","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Turn-off Time-Max (toff)":"300 ns","Transistor Element Material":"SILICON","Configuration":"SEPARATE, 4 ELEMENTS","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Turn-on Time-Max (ton)":"45 ns","Collector-emitter Voltage-Max":"60 V","Transistor App...

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{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"LCC-20","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"1 W","Package Style":"CHIP CARRIER","DC Current Gain-Min (hFE)":"50","Collector-emitter Voltage-Max":"60 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.6000 A","Transistor Element Material":"SILICON","Terminal Position":"QUAD","Transistor Polarity":"PNP","Package Shape":"RECTANGULAR","Num...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","Transistor Type":"4 PNP (Quad)","Frequency - Transition":"-","Family":"Transistors (BJT) - Arrays","Vce Saturation (Max) @ Ib, Ic":"1.6V @ 50mA, 500mA","Current - Collector Cutoff (Max)":"10\u00b5A (ICBO)","Series":"Military, MIL-PRF-19500\/558","Standard Package":"1","Voltage - Collector Emitter Breakdown (Max)":"60V","Supplier Device Package":"-","Packaging":"Bulk","Datasheets":"2N6987(U), 2N6988","Power - Max":"1.5W",...

{"Terminal Finish":"TIN LEAD","Transistor Polarity":"PNP","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"1 W","Collector Current-Max (IC)":"0.6000 A","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Turn-off Time-Max (toff)":"300 ns","Transistor Element Material":"SILICON","Configuration":"SEPARATE, 4 ELEMENTS","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Turn-on Time-Max (ton)":"45 ns","Collector-emitter Voltage-Max":"60 V","Transistor App...

{"Packaging":"Waffle","Brand":"Optek \/ TT Electronics","Product Category":"Bipolar Transistors - BJT","RoHS":"Details","Manufacturer":"TT Electronics"}...

{"Category":"Bipolar Power","Dimensions":"8.89 x 8.89 x 1.91 mm","Maximum Collector Emitter Saturation Voltage":"1.6 V","Transistor Material":"Si","Width":"8.89 mm","Package Type":"CLCC-20","Number of Elements per Chip":"1","Configuration":"Common Base","Maximum Operating Temperature":"+200 \u00b0C","Transistor Type":"PNP","Maximum Collector Base Voltage":"60 V","Operating Temperature Range":"-65 to +200 \u00b0C","Maximum Base Emitter Saturation Voltage":"2.6 V","Maximum Emitter Base Voltage":"5 V","Length"...

{"Category":"Bipolar Power","Dimensions":"8.89 x 8.89 x 1.91 mm","Maximum Collector Emitter Saturation Voltage":"1.6 V","Transistor Material":"Si","Width":"8.89 mm","Package Type":"Ceramic","Number of Elements per Chip":"1","Configuration":"Common Base","Maximum Operating Temperature":"+200 \u00b0C","Transistor Type":"PNP","Maximum Collector Base Voltage":"60 V","Operating Temperature Range":"-65 to +200 \u00b0C","Maximum Base Emitter Saturation Voltage":"2.6 V","Maximum Emitter Base Voltage":"5 V","Length"...

{"Category":"Bipolar Power","Dimensions":"8.89 x 8.89 x 1.91 mm","Maximum Collector Emitter Saturation Voltage":"1.6 V","Transistor Material":"Si","Width":"8.89 mm","Package Type":"Ceramic","Number of Elements per Chip":"1","Configuration":"Common Base","Maximum Operating Temperature":"+200 \u00b0C","Transistor Type":"PNP","Maximum Collector Base Voltage":"60 V","Operating Temperature Range":"-65 to +200 \u00b0C","Maximum Base Emitter Saturation Voltage":"2.6 V","Maximum Emitter Base Voltage":"5 V","Length"...

{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC, DIP-14","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.5 W","Package Style":"IN-LINE","DC Current Gain-Min (hFE)":"50","Collector-emitter Voltage-Max":"60 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.6000 A","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"PNP","Package Shape":"RECTANGULAR","Conf...

{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC, DIP-14","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.5 W","Package Style":"IN-LINE","DC Current Gain-Min (hFE)":"50","Collector-emitter Voltage-Max":"60 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.6000 A","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"PNP","Package Shape":"RECTANGULAR","Numb...

{"Collector Current (DC) ":"0.6 A","Transistor Polarity":"PNP","Collector Current (DC) (Max)":"0.6 A","Collector-Emitter Voltage":"60 V","Mounting":"Through Hole","Emitter-Base Voltage":"5 V","Category ":"Bipolar Power","Operating Temperature Classification":"Military","Power Dissipation":"1.5 W","Operating Temp Range":"-65C to 200C","Package Type":"SBCDIP","Collector-Base Voltage":"60 V","Rad Hardened":"No","DC Current Gain":"75","Pin Count":"14","Number of Elements":"4"}...

{"Collector Current (DC) ":"0.6 A","Transistor Polarity":"PNP","Collector Current (DC) (Max)":"0.6 A","Collector-Emitter Voltage":"60 V","Mounting":"Through Hole","Emitter-Base Voltage":"5 V","Category ":"Bipolar Power","Operating Temperature Classification":"Military","Power Dissipation":"1.5 W","Operating Temp Range":"-65C to 200C","Package Type":"SBCDIP","Collector-Base Voltage":"60 V","Rad Hardened":"No","DC Current Gain":"75","Pin Count":"14","Number of Elements":"4"}...

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{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE POWER"}...

{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC, DIP-14","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.5 W","Package Style":"IN-LINE","DC Current Gain-Min (hFE)":"50","Collector-emitter Voltage-Max":"60 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.6000 A","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"PNP","Package Shape":"RECTANGULAR","Numb...

{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC, DIP-14","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.5 W","Package Style":"IN-LINE","DC Current Gain-Min (hFE)":"50","Collector-emitter Voltage-Max":"60 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.6000 A","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"PNP","Package Shape":"RECTANGULAR","Numb...

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{"Status":"ACTIVE","Package Body Material":"CERAMIC, GLASS-SEALED","Mfr Package Description":"CERDIP-14","Terminal Form":"THROUGH-HOLE","Package Style":"IN-LINE","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"60 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.6000 A","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"PNP","Package Shape":"RECTANGULAR","Configuration":"SEPARATE, 4 ELEMENTS","Transistor Type":"GENERAL PURPOSE P...

{"Status":"ACTIVE","Package Body Material":"CERAMIC, GLASS-SEALED","Mfr Package Description":"HERMETIC SEALED, CERDIP-14","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.5 W","Package Style":"IN-LINE","DC Current Gain-Min (hFE)":"50","Collector-emitter Voltage-Max":"60 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.6000 A","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"PNP","Package Shape":"RECTANGULAR","Configuration":"SE...

{"Status":"ACTIVE","Package Body Material":"CERAMIC, GLASS-SEALED","Mfr Package Description":"HERMETIC SEALED, CERDIP-14","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.5 W","Package Style":"IN-LINE","DC Current Gain-Min (hFE)":"50","Collector-emitter Voltage-Max":"60 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.6000 A","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"PNP","Package Shape":"RECTANGULAR","Configuration":"SE...

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