{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 1mA","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Current - Continuous Drain (Id) @ 25\u00b0C":"200mA (Tc)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"5 Ohm @ 500mA, 10V","Datasheets":"2N7000\/02, NDS7002A Datasheet","FET Type":"MOSFET N-Channel, Metal Oxide","Sta...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Number of Terminals":"3","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"0.2000 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Package St...

{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Number of Terminals":"3","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"0.2000 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm"...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Number of Terminals":"3","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"0.2000 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Package St...

{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Number of Terminals":"3","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"0.2000 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm"...

{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-92, 3 PIN","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"0.2000 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SIN...

{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-92, 3 PIN","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"0.2000 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SIN...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.2(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Ammo Pack","Power Dissipation":"0.4(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-92","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...