{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-236AB, 3 PIN","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.1150 A","Transistor Element Material":"SILICON","Number of Elements":"1","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT PACKAGE-3","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.4500 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"SMALL OUTLINE","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Conf...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"UNSPECIFIED","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Tr...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application...

{"Product Category":"MOSFET","Series":"2N7002","Brand":"Central Semiconductor","Packaging":"Bulk","RoHS":"Details","Manufacturer":"Central Semiconductor"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application...

{"Terminal Finish":"MATTE TIN (315)","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Br...

{"Terminal Finish":"MATTE TIN (315)","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Br...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"115mA (Tc)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT-23 SERIES SOT-23","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 500mA, 10V","Datasheets":"2N7002","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vdss)":"60V","RoHS Information":"RoHS Declaration of Compliance"...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"SOT-23 SERIES SOT-23","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"50pF @ 25V","Series":"-","Standard Package":"1","Supplier Device Package":"SOT-23","Datasheets":"2N7002","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Cut Tape (CT)","Power - Max":"350mW","Package \/ ...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application...

{"Terminal Finish":"MATTE TIN (315)","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Br...

{"Terminal Finish":"MATTE TIN (315)","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Br...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Series":"-","Standard Package":"3,000","Supplier Device Package":"SOT-23","Datasheets":"2N7002-G Datasheet","Rds On (Max) @ Id, Vgs":"3 Ohm @ 250mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"350mW","RoHS Information":"RoHS Declaration SOT-23 Series Material Declaration","Package \/ Case":"TO-2...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"25pF @ 25V","Series":"-","Standard Package":"1","Supplier Device Package":"SOT-23","Datasheets":"2N7002-HF","Rds On (Max) @ Id, Vgs":"3 Ohm @ 250mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Cut Tape (CT)","Power - Max":"350mW","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Mounting Type":"Sur...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Series":"-","Standard Package":"3,000","Supplier Device Package":"SOT-23","Datasheets":"2N7002-G Datasheet","Rds On (Max) @ Id, Vgs":"3 Ohm @ 250mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"350mW","RoHS Information":"RoHS Declaration SOT-23 Series Material Declaration","Package \/ Case":"TO-2...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"25pF @ 25V","Series":"-","Standard Package":"1","Supplier Device Package":"SOT-23","Datasheets":"2N7002-HF","Rds On (Max) @ Id, Vgs":"3 Ohm @ 250mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Cut Tape (CT)","Power - Max":"350mW","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Mounting Type":"Sur...

{"Mounting":"Surface Mount","Rad Hardened":"No","Package Type":"SOT-23","Pin Count":"3"}...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3300 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdow...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Su...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHIN...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"13.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Surfac...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"SOT23","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"50pF @ 25V","Series":"-","Standard Package":"3,000","Supplier Device Package":"SOT-23-3","Datasheets":"2N7002 Datasheet","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 50mA, 5V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"300mW","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Mounti...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Catalog Drawings":"SOT-23 Package Top SOT-23 Package Side 1 SOT-23 Package Side 2","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"115mA (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT23","PCN Design\/Specification":"Bond Wire 22\/Sept\/2008 Green Encapsulate 15\/May\/2008","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 50mA, 5V","Datasheets":"2N7002 Dat...

{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"180mA (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT23","Rds On (Max) @ Id, Vgs":"6 Ohm @ 115mA, 5V","Datasheets":"2N7002A Datasheet","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vdss)":"60V","RoHS Information":"RoHS Cert of Compliance","Online...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"0.54(W)","Continuous Drain Current":"0.22(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"0.54(W)","Continuous Drain Current":"0.22(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Applicat...

{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Other Drawings":"SOT-363 Package Top SOT-363 Package Side 1 SOT-363 Package Side 2","Package \/ Case":"6-TSSOP, SC-88, SOT-363","Gate Charge (Qg) @ Vgs":"-","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 50mA, 5V","Product Photos":"6-TSSOP, SC-88, SOT-363","PCN Design\/Specification":"Green Encapsulate Change 09\/July\/2007 Bond Wire 16\/Sept\/2008","PCN Other":"Multiple Device Changes 29\/Apr\/2013","Datashe...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package \/ Case":"6-TSSOP, SC-88, SOT-363","Current - Continuous Drain (Id) @ 25\u00b0C":"180mA","Gate Charge (Qg) @ Vgs":"0.87nC @ 10V","Product Photos":"6-TSSOP, SC-88, SOT-363","Rds On (Max) @ Id, Vgs":"6 Ohm @ 115mA, 10V","Datasheets":"2N7002DWA","FET Type":"2 N-Channel (Dual)","Standard Package":"3,000","Drain to Source Voltage (Vdss)":"60V","PCN Obsolescence\/ EOL":"Multiple Devices...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.23(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"0.4(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-363","Type":"Small Signal","Pin Count":"6","Number of Elements":"2"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"6-TSSOP, SC-88, SOT-363","Family":"FETs - Arrays","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"50pF @ 25V","Series":"-","Standard Package":"1","Supplier Device Package":"SOT-363","Datasheets":"2N7002DW","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 50mA, 5V","FET Type":"2 N-Channel (Dual)","Packaging":"Cut Tape (CT)","Power - Max":"310mW","Package \/ Case":"6-...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2400 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Surface Mount":"Ye...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"250mA (Ta)","Gate Charge (Qg) @ Vgs":"0.22nC @ 4.5V","Product Photos":"SOT23","PCN Design\/Specification":"Green Encapsulate 15\/May\/2008 Bond Wire 3\/May\/2011","Rds On (Max) @ Id, Vgs":"3 Ohm @ 250mA, 10V","Datasheets":"2N7002E Datasheet","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Pack...

{"Packaging":"Tape and Reel","Mounting":"Surface Mount","Rad Hardened":"No","Package Type":"SOT-23","Pin Count":"3"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"0.51(W)","Continuous Drain Current":"0.17(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"2 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Surface M...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 1mA","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"380mA (Ta)","Gate Charge (Qg) @ Vgs":"0.3nC @ 4.5V","Product Photos":"SOT23","PCN Assembly\/Origin":"Plating Site Addition 29\/Jul\/2015","PCN Design\/Specification":"Green Encapsulate 15\/May\/2008 Bond Wire 3\/May\/2011","Rds On (Max) @ Id, Vgs":"2 Ohm @ 500mA, 10V","Datasheets":"2N7002K Datasheet","FET...