{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Typical Turn-Off Delay Time":"11 ns","Description":"Value","Maximum Continuous Drain Current":"0.115 A","Package":"3SOT-23","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"7 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"7500@10V mOhm","Manufacturer":"LESHAN RADIO CO."}...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"115mA (Tc)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT-23-3","PCN Design\/Specification":"Copper Wire 26\/May\/2009","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 500mA, 10V","Datasheets":"2N7002L","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"10","Drain to Source Voltage (Vdss)":"60V","PCN ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"115mA (Tc)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT-23-3","PCN Design\/Specification":"Copper Wire 26\/May\/2009","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 500mA, 10V","Datasheets":"2N7002L Datasheet","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vdss)":"6...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0750 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Br...