Irf.com/2N7218D
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"112 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vo...
1437 Bytes - 08:16:55, 08 May 2024
Irf.com/2N7218DPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"112 A","Channel Type":"N-CHANNEL","FET Technol...
1504 Bytes - 08:16:55, 08 May 2024
Irf.com/JANTX2N7218D
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"112 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vo...
1464 Bytes - 08:16:55, 08 May 2024
Irf.com/JANTXV2N7218D
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"112 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vo...
1471 Bytes - 08:16:55, 08 May 2024
