{"C(iss) Max. (F)":"400p","Absolute Max. Power Diss. (W)":"20","@Pulse Width (s) (Condition)":"10u","g(fs) Max, (S) Trans. conduct,":"4.0","@V(GS) (V) (Test Condition)":"4.0","t(d)off Max. (s) Off time":"90n","r(DS)on Max. (Ohms)":"170m","@V(DS) (V) (Test Condition)":"10","I(DM) Max (A)(@25°C)":"16","I(GSS) Max. (A)":"10u","g(fs) Min. (S) Trans. conduct.":"2.5","V(BR)GSS (V)":"15","@I(D) (A) (Test Condition)":"2.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Conditi...

{"C(iss) Max. (F)":"1.0n","Absolute Max. Power Diss. (W)":"30","@Pulse Width (s) (Condition)":"10u","g(fs) Max, (S) Trans. conduct,":"8.0","@V(GS) (V) (Test Condition)":"4.0","t(d)off Max. (s) Off time":"130n","r(DS)on Max. (Ohms)":"75m","@V(DS) (V) (Test Condition)":"10","I(DM) Max (A)(@25°C)":"32","I(GSS) Max. (A)":"10u","g(fs) Min. (S) Trans. conduct.":"5.0","V(BR)GSS (V)":"15","@I(D) (A) (Test Condition)":"4.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Conditi...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3.6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"7 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"900 V...

{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"75p","I(G) Max. (A)":"10m","Absolute Max. Power Diss. (W)":"1.2","I(DSS) Max. (A)":"30m","I(GSS) Max. (A)":"1.0n","I(DSS) Min. (A)":"5.0m","V(BR)GSS (V)":"40","g(fs) Min. (S) Trans. conduct.":"40m","Package":"DIP","Military":"N","V(GS)off Max. (V)":"1.2"}...