Alpha_omega_semiconductors/AOWF11N60
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Power Dissipation":"27.8(W)","Continuous Drain Current":"11(A)","Mounting":"Through Hole","Drain-Source On-Volt":"600(V)","Packaging":"Rail\/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-262F","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1557 Bytes - 18:18:13, 02 May 2024
Aosmd.com/AOWF11N60
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Package \/ Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Current - Continuous Drain (Id) @ 25\u00b0C":"11A (Tc)","Gate Charge (Qg) @ Vgs":"37nC @ 10V","Product Photos":"TO-262-3 Long Leads","Rds On (Max) @ Id, Vgs":"650 mOhm @ 5.5A, 10V","Datasheets":"AOWF11N60 TO262F Pkg Drawing","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1,000","Other Related Documents":"AOS Green Polic...
1802 Bytes - 18:18:13, 02 May 2024