{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"3000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"58 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"232 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 2.5mA","Catalog Drawings":"TO-264 Front","Package \/ Case":"TO-264-3, TO-264AA","Current - Continuous Drain (Id) @ 25\u00b0C":"58A (Tc)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"TO-264 PKG","Rds On (Max) @ Id, Vgs":"90 mOhm @ 29A, 12V","Datasheets":"APL502(B2,L)","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"25","Drain to Source Voltage (Vdss)":"500V","Online Catalog":"N-Channel Standard ...