{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"150(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail\/Tube","Power Dissipation":"230(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"150(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"230(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"150A (Tc)","Gate Charge (Qg) @ Vgs":"180nC @ 10V","Product Photos":"TO-263","PCN Assembly\/Origin":"AUIRFxx Series Wafer Process 29\/Jul\/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"4.9 mOhm @ 75A, 10V","Datasheets":"A...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 150\u00b5A","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"D2PAK (7-Lead)","Datasheets":"AUIRF1405ZS-7P","Rds On (Max) @ Id, Vgs":"4.9 mOhm @ 88A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"230W","PCN Packaging":"Package Drawing Update 19\/Aug\/2015","Package \/ Case":"TO-263-7, D\u00b2Pak...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 150\u00b5A","Input Capacitance (Ciss) @ Vds":"5360pF @ 25V","Series":"HEXFET\u00ae","Standard Package":"800","Supplier Device Package":"D2PAK (7-Lead)","Datasheets":"AUIRF1405ZS-7P","Rds On (Max) @ Id, Vgs":"4.9 mOhm @ 88A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"230W","PCN Packaging":"Package Drawing ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"150A (Tc)","Gate Charge (Qg) @ Vgs":"180nC @ 10V","Product Photos":"TO-263","PCN Assembly\/Origin":"AUIRFxx Series Wafer Process 29\/Jul\/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"4.9 mOhm @ 75A, 10V","Datasheets":"A...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"270 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"150 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0049 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"600 A","Channel Type":"N-CH...