{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"180(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"370(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Family":"FETs - Single","Product Photos":"TO-263","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Series":"HEXFET\u00ae","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Supplier Device Package":"D\u00b2PAK","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRLS(L)4030","Rds On (Max) @ Id, Vgs":"4.3 mOhm @ 110A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packagin...