APT801R2BN N-Channel Enhancement MOSFET - RthJC 0.51C/W(max),RthJA 40C/W(max)
From Advanced Power Technology
| @(VDS) (V) (Test Condition) | 30 |
| Absolute Max. Power Diss. (W) | 240 |
| C(iss) Max. (F) | 1.8n |
| I(D) Abs. Drain Current (A) | 9.0 |
| I(DSS) Min. (A) | 250u |
| I(GSS) Max. (A) | 100n |
| Military | N |
| Package | TO-247AD |
| V(BR)DSS (V) | 800 |
| V(BR)GSS (V) | 30 |
| r(DS)on Max. (Ohms) | 1.2 |
| t(f) Max. (s) Fall time. | 39n |
| t(r) Max. (s) Rise time | 29n |
