ABL1601-700 SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
From Advanced Semiconductor, Inc.
| Status | ACTIVE |
| CW RF Incident Power-Max | 0.0750 W |
| Configuration | SINGLE |
| Diode Capacitance-Max | 0.1500 pF |
| Diode Element Material | SILICON |
| Diode Type | MIXER DIODE |
| Frequency Band | KU BAND |
| Noise Figure-Max | 7.5 dB |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | RECTANGULAR |
| Package Style | MICROWAVE |
| Surface Mount | Yes |
| Technology | SCHOTTKY |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Type of Schottky Barrier | LOW BARRIER |
