AHV8501 MF-HF BAND, 180 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
From Advanced Semiconductor, Inc.
| Status | ACTIVE |
| Breakdown Voltage-Min | 12 V |
| Case Connection | ISOLATED |
| Configuration | SINGLE |
| Diode Capacitance Ratio-Min | 10 |
| Diode Capacitance-Nom (Cd) | 180 pF |
| Diode Element Material | SILICON |
| Diode Type | VARIABLE CAPACITANCE DIODE |
| Frequency Band | MEDIUM FREQUENCY TO HIGH FREQUENCY |
| Mfr Package Description | GLASS PACKAGE-2 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Package Body Material | GLASS |
| Package Shape | ROUND |
| Package Style | LONG FORM |
| Quality Factor-Min | 130 |
| Terminal Form | WIRE |
| Terminal Position | AXIAL |
| Variable Capacitance Diode Classification | HYPERABRUPT |
