ASI10633
L BAND, Si, NPN, RF POWER TRANSISTOR

From Advanced Semiconductor, Inc.

StatusACTIVE
Collector Current-Max (IC)10 A
Collector-base Capacitance-Max5 pF
Collector-emitter Voltage-Max35 V
ConfigurationSINGLE
Highest Frequency BandL BAND
Number of Elements1
Number of Terminals4
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeROUND
Package StylePOST/STUD MOUNT
Terminal FormFLAT
Terminal PositionRADIAL
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON
Transistor PolarityNPN
Transistor TypeRF POWER

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