AT300831
S-C BAND, 3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE

From Advanced Semiconductor, Inc.

StatusACTIVE
Breakdown Voltage-Min30 V
Diode Cap Tolerance10 %
Diode Capacitance Ratio-Min4
Diode Capacitance-Nom (Cd)3.9 pF
Diode Element MaterialSILICON
Diode TypeVARIABLE CAPACITANCE DIODE
Frequency BandS BAND TO C BAND
Number of Terminals2
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeROUND
Package StyleMICROWAVE
Quality Factor-Min2800
Surface MountYes
Terminal FormNO LEAD
Terminal PositionEND
Variable Capacitance Diode ClassificationABRUPT

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