AT301384
L BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE

From Advanced Semiconductor, Inc.

StatusACTIVE
Breakdown Voltage-Min30 V
Diode Cap Tolerance10 %
Diode Capacitance Ratio-Min4.4
Diode Capacitance-Nom (Cd)10 pF
Diode Element MaterialSILICON
Diode TypeVARIABLE CAPACITANCE DIODE
Frequency BandL BAND
Number of Terminals2
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeROUND
Package StyleMICROWAVE
Quality Factor-Min2200
Surface MountYes
Terminal FormNO LEAD
Terminal PositionEND
Variable Capacitance Diode ClassificationABRUPT

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