HSCH5531 SILICON, LOW BARRIER SCHOTTKY, K BAND, MIXER DIODE
From Advanced Semiconductor, Inc.
| Status | ACTIVE |
| Configuration | SINGLE |
| Diode Capacitance-Max | 0.1000 pF |
| Diode Element Material | SILICON |
| Diode Type | MIXER DIODE |
| Frequency Band | K BAND |
| Mfr Package Description | 711, 3 PIN |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | MICROWAVE |
| Power Dissipation Limit-Max | 0.1500 W |
| Surface Mount | Yes |
| Technology | SCHOTTKY |
| Terminal Form | FLAT |
| Terminal Position | TRIPLE |
| Type of Schottky Barrier | LOW BARRIER |
