MRF137
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

From Advanced Semiconductor, Inc.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min65 V
Drain Current-Max (ID)5 A
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Highest Frequency BandULTRA HIGH FREQUENCY BAND
Number of Elements1
Number of Terminals4
Operating ModeENHANCEMENT
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeROUND
Package StyleFLANGE MOUNT
Terminal FormFLAT
Terminal PositionRADIAL
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON
Transistor TypeRF POWER

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