VHB25-28S
VHF BAND, Si, NPN, RF POWER TRANSISTOR

From Advanced Semiconductor, Inc.

StatusActive
Case ConnectionEMITTER
Collector Current-Max (IC)4 A
Collector-base Capacitance-Max50 pF
Collector-emitter Voltage-Max35 V
ConfigurationSINGLE
DC Current Gain-Min (hFE)5
Highest Frequency BandVERY HIGH FREQUENCY BAND
JESD-30 CodeO-CRPM-F4
Mfr Package Description0.380 INCH, STUD PACKAGE-4
Number of Elements1
Number of Terminals4
Operating Temperature-Max200 Cel
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeROUND
Package StylePOST/STUD MOUNT
Polarity/Channel TypeNPN
Power Dissipation-Max (Abs)40 W
Qualification StatusCOMMERCIAL
Sub CategoryOther Transistors
Surface MountNO
Terminal FormFLAT
Terminal PositionRADIAL
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON
Transition Frequency-Nom (fT)250 MHz

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