VTS1188 Infrared-Optimized Photodiode
From EG&G, Inc.
| @V(R) (V) (Test Condition) | 100m |
| @Wavelength(m)(Test Condition) | 925n |
| C(T) Max. (F) Capacitance | 180p |
| Ioff Max.(A) Off-state Current | 250n |
| Package | Dome-8.2 |
| Photosensitive Area (mm2) | 11 |
| Re Min.(A/W) Responsivity | 500m |
| Semiconductor Material | Silicon |
| Spectral Response High (m) | 1.1u |
| Spectral Response Low (m) | 400n |
