JAN2N5115
30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET

From Defense Logistics Agency

StatusACTIVE
Case ConnectionGATE
Channel TypeP-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min30 V
Drain-source On Resistance-Max100 ohm
FET TechnologyJUNCTION
Mfr Package DescriptionSIMILAR TO TO-18, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeDEPLETION
Package Body MaterialMETAL
Package ShapeROUND
Package StyleCYLINDRICAL
Power Dissipation Ambient-Max0.5000 W
Terminal FormWIRE
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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