JANTXV2N6790U
3.5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET

From Defense Logistics Agency

StatusACTIVE
Channel TypeN-CHANNEL
DS Breakdown Voltage-Min200 V
Drain Current-Max (ID)3.5 A
Drain-source On Resistance-Max0.8000 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Terminals18
Operating ModeENHANCEMENT
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeSQUARE
Package StyleCHIP CARRIER
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormNO LEAD
Terminal PositionQUAD
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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