HSCH-6330F01 SILICON, LOW BARRIER SCHOTTKY, L-KU BAND, MIXER DIODE
From Avago Technologies
| Status | ACTIVE-UNCONFIRMED |
| CW RF Incident Power-Max | 0.1500 W |
| Configuration | SINGLE |
| Diode Capacitance-Max | 0.2200 pF |
| Diode Element Material | SILICON |
| Diode Type | MIXER DIODE |
| Frequency Band | L BAND TO KU BAND |
| Lead Free | Yes |
| Noise Figure-Max | 7.2 dB |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | ROUND |
| Package Style | DISK BUTTON |
| Pulse RF Incident Power-Max | 1 W |
| Surface Mount | Yes |
| Technology | SCHOTTKY |
| Terminal Finish | MATTE TIN |
| Terminal Form | FLAT |
| Terminal Position | RADIAL |
| Type of Schottky Barrier | LOW BARRIER |
