{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC\/EPOXY","Transistor Polarity":"NPN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"110","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"300 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMA...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN (315)","Package Body Material":"PLASTIC\/EPOXY","Transistor Polarity":"NPN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"110","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"300 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Terminal Positi...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT, PLASTIC PACKAGE-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"110","Collector-emitter Voltage-Max":"30 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"300 MHz","Collector Current-Max (IC)":"0.1000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"S...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT, PLASTIC PACKAGE-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"110","Collector-emitter Voltage-Max":"30 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"300 MHz","Collector Current-Max (IC)":"0.1000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"S...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Frequency - Transition":"300MHz","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 5mA, 100mA","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Voltage - Collector Emitter Breakdown (Max)":"30V","Power - Max":"500mW","Packaging":"Bulk","Datasheets":"BC546-50 Datasheet","Current - Collector Cutof...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Frequency - Transition":"300MHz","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 5mA, 100mA","Supplier Device Package":"TO-92-3","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","PCN Design\/Specification":"Copper Lead Frame 12\/Oct\/2007","Voltage - Collector Emitter Breakdown (Max)":"30V","Pa...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"110 @ 2mA, 5V","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 5mA, 100mA","Current - Collector Cutoff (Max)":"15nA (ICBO)","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"30V","Supplier Device Package":"TO-92-3","Packaging":"Bul...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Frequency - Transition":"300MHz","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 5mA, 100mA","Supplier Device Package":"TO-92-3","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads","PCN Design\/Specification":"Copper Lead Frame 12\/Oct\/2007","Voltage - Collector Emitter Breakdown (Ma...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Frequency - Transition":"300MHz","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 5mA, 100mA","Supplier Device Package":"TO-92-3","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads","PCN Design\/Specification":"Copper Lead Frame 12\/Oct\/2007","Voltage - Collector Emitter Breakdown (Ma...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Frequency - Transition":"300MHz","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 5mA, 100mA","Supplier Device Package":"TO-92-3","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads","PCN Design\/Specification":"Copper Lead Frame 12\/Oct\/2007","Voltage - Collector Emitter Breakdown (Ma...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-92, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.6250 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"110","Collector-emitter Voltage-Max":"30 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"150 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"R...

{"Terminal Finish":"MATTE TIN","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.6250 W","Collector Current-Max (IC)":"0.1000 A","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"30 V","Terminal Position":"BOTTOM","Transistor Application":"AMPL...

{"Terminal Finish":"MATTE TIN","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.6250 W","Collector Current-Max (IC)":"0.1000 A","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"30 V","Terminal Position":"BOTTOM","Transistor Application":"AMPL...

{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-92, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"110","Collector-emitter Voltage-Max":"30 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"300 MHz","Collector Current-Max (IC)":"0.1000 A","EU RoHS Compliant":"Yes","Terminal Position":"BOTTOM","Transist...

{"V(CE)sat Max.(V)":".60","Absolute Max. Power Diss. (W)":"625m","V(BR)CBO (V)":"30","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"110","I(C) Abs.(A) Collector Current":"100m","h(FE) Max. Current gain.":"220","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"15n","@V(CBO) (V) (Test Condition)":"35","Package":"TO-92","f(T) Min. (Hz) Transition Freq":"150M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"5.0m","V(BR)CEO (V)":"30","Military":"N","@I(C) (A) (Test ...

{"Packaging":"Ammo Pack","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"NPN","Factory Pack Quantity":"4000","Brand":"Taiwan Semiconductor","Mounting Style":"Through Hole","Package \/ Case":"TO-92-3","Manufacturer":"Taiwan Semiconductor"}...

{"@I(C) (A) (Test Condition)":"2.0m","Absolute Max. Power Diss. (W)":"500m","I(C) Abs.(A) Collector Current":"100m","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"300M","V(BR)CEO (V)":"30","Package":"TO-92","h(FE) Min. Static Current Gain":"220","V(BR)CBO (V)":"30","Military":"N","C(obo) (Max) (F)":"3.5p"}...

"Medium Power, General Purpose, BC548A, Silicon, NPN, 500mW, 30V, 30V, 6V, 100mA, 150°C, 200MHz, 4.5, 110MIN, PHI, TO92"...

{"@I(C) (A) (Test Condition)":"2.0m","h(fe) Min. SS Current gain.":"220","I(CBO) Max. (A)":"15n","Absolute Max. Power Diss. (W)":"500m","I(C) Abs.(A) Collector Current":"100m","C(obo) (Max) (F)":"2.5p","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"300M","V(BR)CEO (V)":"30","Package":"SPAKvar","V(BR)CBO (V)":"30","Military":"N"}...

"Medium Power, General Purpose, LBC548A, Silicon, NPN, 500mW, 30V, 30V, 6V, 100mA, 150°C, 200MHz, 4.5, 110MIN, SAN, TO92"...

"Low Power, General Purpose, LBC548AP, Silicon, NPN, 500mW, 30V, 30V, 6V, 100mA, 150°C, 200MHz, 4.5, 110MIN, SAN, TO226"...

{"@I(C) (A) (Test Condition)":"10m","V(CE)sat Max.(V)":"250m","I(CBO) Max. (A)":"15n","Package":"Chip","h(FE) Max. Current gain.":"220","f(T) Min. (Hz) Transition Freq":"225M","@V(CE) (V) (Test Condition)":"5","@I(B) (A) (Test Condition)":"500u","V(BR)CEO (V)":"30","@V(CBO) (V) (Test Condition)":"30","h(FE) Min. Static Current Gain":"110","V(BR)CBO (V)":"30","Military":"N","C(obo) (Max) (F)":"4.5p"}...

{"@I(C) (A) (Test Condition)":"2.0m","I(CBO) Max. (A)":"15n","Package":"Chip","h(FE) Max. Current gain.":"220","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"225M","V(BR)CEO (V)":"30","h(FE) Min. Static Current Gain":"110","V(BR)CBO (V)":"30","Military":"N","C(obo) (Max) (F)":"4.5p"}...

{"@I(C) (A) (Test Condition)":"2.0m","I(CBO) Max. (A)":"15n","Package":"Chip","h(FE) Max. Current gain.":"220","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"225M","V(BR)CEO (V)":"30","h(FE) Min. Static Current Gain":"110","V(BR)CBO (V)":"30","Military":"N","C(obo) (Max) (F)":"4.5p"}...

{"@I(C) (A) (Test Condition)":"2.0m","I(CBO) Max. (A)":"15n","Package":"Chip","h(FE) Max. Current gain.":"220","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"225M","V(BR)CEO (V)":"30","h(FE) Min. Static Current Gain":"110","V(BR)CBO (V)":"30","Military":"N","C(obo) (Max) (F)":"4.5p"}...