{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-18, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3600 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"120","Collector-emitter Voltage-Max":"32 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"125 MHz","Collector Current-Max (IC)":"0.2000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape...

{"Terminal Finish":"GOLD","Transistor Polarity":"NPN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3600 W","Collector Current-Max (IC)":"0.2000 A","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"32 V","Terminal Position":"BOTTOM","China RoHS Compliant":"Yes","Mfr Package Descriptio...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-18, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3600 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"120","Collector-emitter Voltage-Max":"32 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"125 MHz","Collector Current-Max (IC)":"0.2000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape...

{"Terminal Finish":"GOLD","Transistor Polarity":"NPN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3600 W","Collector Current-Max (IC)":"0.2000 A","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"32 V","Terminal Position":"BOTTOM","China RoHS Compliant":"Yes","Mfr Package Descriptio...

"Low Power, General Purpose, BCY58A, Silicon, NPN, 390mW, 32V, 32V, 7V, 100mA, 175°C, 120MHz, 7, 125MIN, ITT, TO18"...

{"@I(C) (A) (Test Condition)":"100m","t(r) Max. (s) Rise time":"50n","I(CBO) Max. (A)":".20n","Absolute Max. Power Diss. (W)":"400m","I(C) Abs.(A) Collector Current":"200m","t(f) Max. (s) Fall time.":"80n","@V(CE) (V) (Test Condition)":"1.0","f(T) Min. (Hz) Transition Freq":"250M","V(BR)CEO (V)":"32","Package":"TO-92var","h(FE) Min. Static Current Gain":"40","Military":"N","t(s) Max. (s) Storage time.":"400n","C(obo) (Max) (F)":"6.0p","t(d) Max. (s) Delay time.":"35n"}...

{"@I(C) (A) (Test Condition)":"2m","V(CE)sat Max.(V)":"350m","I(CBO) Max. (A)":"10n","Package":"Chip","h(FE) Max. Current gain.":"220","f(T) Min. (Hz) Transition Freq":"125M","@V(CE) (V) (Test Condition)":"5","@I(B) (A) (Test Condition)":"250u","V(BR)CEO (V)":"32","@V(CBO) (V) (Test Condition)":"32","h(FE) Min. Static Current Gain":"120","V(BR)CBO (V)":"32","Military":"N","C(obo) (Max) (F)":"6.0p"}...

{"@I(C) (A) (Test Condition)":"2.0m","I(CBO) Max. (A)":"10n","Package":"Chip","h(FE) Max. Current gain.":"220","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"125M","V(BR)CEO (V)":"32","h(FE) Min. Static Current Gain":"120","V(BR)CBO (V)":"32","Military":"N","C(obo) (Max) (F)":"6.0p"}...

{"@I(C) (A) (Test Condition)":"2.0m","I(CBO) Max. (A)":"10n","Package":"Chip","h(FE) Max. Current gain.":"220","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"125M","V(BR)CEO (V)":"32","h(FE) Min. Static Current Gain":"120","V(BR)CBO (V)":"32","Military":"N","C(obo) (Max) (F)":"6.0p"}...

{"@I(C) (A) (Test Condition)":"2.0m","I(CBO) Max. (A)":"10n","Package":"Chip","h(FE) Max. Current gain.":"220","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"125M","V(BR)CEO (V)":"32","h(FE) Min. Static Current Gain":"120","V(BR)CBO (V)":"32","Military":"N","C(obo) (Max) (F)":"6.0p"}...