{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Avalanche Energy Rating (Eas)":"24 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.17 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"800 mOhm @ 1.17A, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 160\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Other Names":"BSP315PE6327 BSP315PINCT","Packaging":"Cut Tape (CT)","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"BSP315P","Power - Max":"1.8W","Package \/ Case":"TO-261-4, TO-261AA","Mounting...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 160\u00b5A","Input Capacitance (Ciss) @ Vds":"160pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Datasheets":"BSP315P","Rds On (Max) @ Id, Vgs":"800 mOhm @ 1.17A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"1.8W","Package \/ Case":"TO-261-4, TO-261AA","...

{"Product Category":"MOSFET","Series":"BSP315","Brand":"Infineon Technologies","Packaging":"Reel","Part # Aliases":"BSP315PH6327XTSA1","RoHS":"Details","Manufacturer":"Infineon"}...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Avalanche Energy Rating (Eas)":"24 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.17 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"*","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 160\u00b5A","Series":"SIPMOS\u00ae","Package \/ Case":"*","Supplier Device Package":"*","Datasheets":"BSP315P","Rds On (Max) @ Id, Vgs":"800 mOhm @ 1.17A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"*","Power - Max":"1.8W","Standard Package":"1,000","Input Capacitance (Ciss) @ Vds":"160pF @ 25V","Drain to Source Voltage (Vdss)":"60V","Current...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 160\u00b5A","Input Capacitance (Ciss) @ Vds":"160pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Datasheets":"BSP315P","Rds On (Max) @ Id, Vgs":"800 mOhm @ 1.17A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"1.8W","Package \/ Case":"TO-261-4, TO-261AA","...

{"Polarity":"P","Gate-Source Voltage (Max)":"?20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"1.17 A","Mounting":"Surface Mount","Drain-Source On-Volt":"60 V","Pin Count":"3 +Tab","Packaging":"Tape and Reel","Power Dissipation":"1.8 W","Operating Temp Range":"-55C to 150C","Package Type":"SOT-223","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"0.8 ohm","Number of Elements":"1"}...