{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"SOT-23, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.3000 A","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMAL...

{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMI...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"SOT-23, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.3000 A","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMAL...

{"Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Vgs th - Gate-Source Threshold Voltage":"1.1 V","Qg - Gate Charge":"0.27 nC","Package \/ Case":"SOT-23-3","Fall Time":"24 ns","Packaging":"Reel","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"+ \/- 20 V","Brand":"Toshiba","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","Manufacturer":"Toshiba","Forward Transconductance - Min":"450 mS","Id - Continuous Drain Current":"200 mA","Rds On - Dra...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"1(W)","Continuous Drain Current":"0.2(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Rad Hardened":"No","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...

{"Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Brand":"Toshiba","Id - Continuous Drain Current":"400 mA","Vgs th - Gate-Source Threshold Voltage":"2.1 V","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"1.75 Ohms","Vgs - Gate-Source Breakdown Voltage":"20 V","RoHS":"Details","Manufacturer":"Toshiba"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.4(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"1(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.4(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"1(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.1V @ 250\u00b5A","Series":"-","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Supplier Device Package":"SOT-23","Datasheets":"T2N7002AK","Rds On (Max) @ Id, Vgs":"3.9 Ohm @ 100mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"320mW","Standard Package":"3,000","Input Cap...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"*","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Series":"-","Package \/ Case":"*","Supplier Device Package":"*","Datasheets":"T2N7002BK~","Rds On (Max) @ Id, Vgs":"-","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"*","Power - Max":"-","Standard Package":"1","Input Capacitance (Ciss) @ Vds":"-","Drain to Source Voltage (Vdss)":"60V","Current - Continuous Drain (Id) @ 25\u00b0C":"400mA (Ta)","Other Names":"T...