SD5200N
50 mA, 30 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

From Calogic, LLC

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationCOMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30 V
Drain Current-Max (ID)0.0500 A
Drain-source On Resistance-Max80 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements4
Number of Terminals16
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleIN-LINE
Power Dissipation Ambient-Max0.6400 W
Terminal FinishNOT SPECIFIED
Terminal FormTHROUGH-HOLE
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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