CMBTA13
NPN Darlington Transistor

From Continental Device India Limited

@I(B) (A) (Test Condition)100u
@I(C) (A) (Test Condition)100m
@V(CBO) (V) (Test Condition)30
@V(CE) (V) (Test Condition)5.0
Absolute Max. Power Diss. (W)250m
I(C) Abs.(A) Collector Current300m
I(CBO) Max. (A)100n
MilitaryN
PackageTO-236AA
Semiconductor MaterialSilicon
V(BR)CBO (V)30
V(CE)sat Max.(V)1.5
f(T) Min. (Hz) Transition Freq125M
h(FE) Min. Static Current Gain5.0k

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