CMBT3904E TR
Bipolar Transistors - BJT SMD Small Signal Transistor

From Central Semiconductor

BrandCentral Semiconductor
Collector- Base Voltage VCBO60 V
Collector- Emitter Voltage VCEO Max40 V
Collector-Emitter Saturation Voltage200 mV
ConfigurationSingle
DC Collector/Base Gain hfe Min30 at 100 mA, 1 V
DC Current Gain hFE Max300
Emitter- Base Voltage VEBO6 V
Factory Pack Quantity8000
Gain Bandwidth Product fT300 MHz
ManufacturerCentral Semiconductor
Maximum DC Collector Current200 mA
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
Mounting StyleSMD/SMT
Package / CaseSOT-923
PackagingReel
Pd - Power Dissipation100 mW
Product CategoryBipolar Transistors - BJT
RoHSDetails
SeriesCMBT39
Transistor PolarityNPN

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