2N7002TR13
115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

From Central Semiconductor Corp.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min60 V
Drain Current-Max (ID)0.1150 A
Drain-source On Resistance-Max7.5 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)5 pF
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max0.3500 W
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

External links