C2M0280120D MOSFET N-CH 1200V 10A TO-247-3
From Cree Inc.
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Datasheets | C2M0280120D |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| FET Feature | Standard |
| FET Type | SiCFET N-Channel, Silicon Carbide |
| Family | FETs - Single |
| Featured Product | Cree - Silicon Carbide Power MOSFETs |
| For Use With | KIT8020-CRD-8FF1217P-1-ND - EVAL KIT PCB 2-MOSFET 2-SIC DRVR |
| Gate Charge (Qg) @ Vgs | 20.4nC @ 20V |
| Input Capacitance (Ciss) @ Vds | 259pF @ 1000V |
| Mounting Type | Through Hole |
| Online Catalog | Silicon Carbide (SiC) Standard FETs |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Power - Max | 62.5W |
| Product Photos | TO-247-3 |
| Rds On (Max) @ Id, Vgs | 370 mOhm @ 6A, 20V |
| Series | Z-FET™ |
| Standard Package | 30 |
| Supplier Device Package | TO-247-3 |
| Vgs(th) (Max) @ Id | 2.8V @ 1.25mA (Typ) |
