CAS100H12AM1
MOSFET 2N-CH 1200V 168A MODULE

From Cree Inc.

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C168A
DatasheetsCAS100H12AM1
Drain to Source Voltage (Vdss)1200V (1.2kV)
FET FeatureSilicon Carbide (SiC)
FET Type2 N-Channel (Half Bridge)
FamilyFETs - Modules
Featured ProductCAS100H12AM1 Half-Bridge Module
Gate Charge (Qg) @ Vgs-
Input Capacitance (Ciss) @ Vds9500pF @ 800V
Mounting TypeChassis Mount
PCN Design/SpecificationCAS100H12AM1 Screw Size 15/Apr/2013
Package / CaseModule
PackagingBulk
Power - Max568W
Product PhotosCAS100H12AM1
Rds On (Max) @ Id, Vgs20 mOhm @ 20A, 20V
SeriesZ-FET™
Standard Package1
Supplier Device PackageModule
Vgs(th) (Max) @ Id3.1V @ 50mA

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