{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Package \/ Case":"SOT-523","Current - Continuous Drain (Id) @ 25\u00b0C":"630mA (Ta)","Gate Charge (Qg) @ Vgs":"0.74nC @ 4.5V","Product Photos":"SOT-523 SOT-523","PCN Design\/Specification":"Bond Wire 11\/Nov\/2011","Rds On (Max) @ Id, Vgs":"400 mOhm @ 600mA, 4.5V","Datasheets":"DMG1012T","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"3,000","Drain to Source Voltage (Vdss)":...

{"Category":"MOSFET","Maximum Drain Source Voltage":"20 V","Typical Rise Time":"7.4 ns","Typical Turn-Off Delay Time":"26.7 ns","Description":"Value","Maximum Continuous Drain Current":"0.63 A","Package":"3SOT-523","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b16 V","Typical Turn-On Delay Time":"5.1 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"400@4.5V mOhm","Manufacturer":"Diodes, Inc","Typical Fall Time":"12.3 ns"}...

{"Polarity":"N","Continuous Drain Current":"0.63(A)","Mounting":"Surface Mount","Output Power (Max)":"Not Required W","Type":"Power MOSFET","Gate-Source Voltage (Max)":"\u00b16(V)","Drain Efficiency":"Not Required %","Noise Figure":"Not Required dB","Operating Temperature Classification":"Military","Package Type":"SOT-523","Drain-Source On-Res":"0.4(ohm)","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Operating Temp Range":"-55C to 150C","Pin Count":"3","Channel Mode":"Enhancement","D...