1N4007G-T
DIODE GEN PURP 1KV 1A DO41

From Diodes Incorporated

Capacitance @ Vr, F8pF @ 4V, 1MHz
CategoryDiscrete Semiconductor Products
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr5µA @ 1000V
Datasheets1N4001-4007G,L Datasheet
Diode TypeStandard
FamilyDiodes, Rectifiers - Single
Mounting TypeThrough Hole
Online CatalogStandard Diode
Operating Temperature - Junction-65°C ~ 175°C
Other Names1N4007G 1N4007GDITR 1N4007GT 1N4007GTR 1N4007GTR-ND IN4007G-T
PCN Assembly/OriginQualification Assemby/Test Site 09/Jul/2014
Package / CaseDO-204AL, DO-41, Axial
PackagingTape & Reel (TR)
Product Photos261-DO-41
Reverse Recovery Time (trr)2µs
RoHS InformationRoHS Cert of Compliance
Series-
SpeedStandard Recovery >500ns, > 200mA (Io)
Standard Package5,000
Supplier Device PackageDO-41
Voltage - DC Reverse (Vr) (Max)1000V (1kV)
Voltage - Forward (Vf) (Max) @ If1V @ 1A

External links