BSS84-13-F
130 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

From DIODES Incorporated

StatusACTIVE
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min50 V
Drain Current-Max (ID)0.1300 A
Drain-source On Resistance-Max10 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)12 pF
Mfr Package DescriptionGREEN, PLASTIC PACKAGE-3
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Surface MountYes
Terminal FinishMATTE TIN
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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