BSS8402DW-13
115 mA, 60 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET

From DIODES Incorporated

StatusACTIVE-UNCONFIRMED
Channel TypeN-CHANNEL AND P-CHANNEL
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min60 V
Drain Current-Max (ID)0.1150 A
Drain-source On Resistance-Max7.5 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)5 pF
Mfr Package DescriptionPLASTC PACKAGE-6
Number of Elements2
Number of Terminals6
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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