DMN2015UFDE-7 MOSFET N-CH 20V 10.5A U-DFN
From Diodes Incorporated
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Ta) |
| Datasheets | DMN2015UFDE |
| Drain to Source Voltage (Vdss) | 20V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 45.6nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1779pF @ 10V |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Other Names | DMN2015UFDE-7DITR DMN2015UFDE7 |
| PCN Design/Specification | Wafer Site/Bond Wire 8/Apr/2013 |
| Package / Case | 6-UDFN |
| Packaging | Tape & Reel (TR) |
| Power - Max | 660mW |
| Product Photos | 6-UDFN2020 |
| Rds On (Max) @ Id, Vgs | 11.6 mOhm @ 8.5A, 4.5V |
| RoHS Information | RoHS Cert of Compliance |
| Series | - |
| Standard Package | 3,000 |
| Supplier Device Package | * |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
