DMN26D0UFB4-7B
240 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

From DIODES Incorporated

StatusACTIVE
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min20 V
Drain Current-Max (ID)0.2400 A
Drain-source On Resistance-Max3 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionGREEN, ULTRA SMALL, PLASTIC, CASE DFN1006H4-3, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleCHIP CARRIER
Surface MountYes
Terminal FinishNICKEL PALLADIUM GOLD OVER COPPER
Terminal FormNO LEAD
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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