VN10LPSMTA
270 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

From DIODES Incorporated

StatusTransferred
ConfigurationSINGLE
DS Breakdown Voltage-Min60 V
Drain Current-Max (ID)0.2700 A
Drain-source On Resistance-Max7.5 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 CodeR-PSSO-G3
JESD-609 Codee3
Mfr Package DescriptionTO-92 COMPATIBLE, E-LINE PACKAGE-3
Moisture Sensitivity Level1
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT MODE
Operating Temperature-Max200 Cel
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)260
Polarity/Channel TypeN-CHANNEL
Qualification StatusCOMMERCIAL
Surface MountYES
Terminal FinishMATTE TIN
Terminal FormGULL WING
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)40
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON

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