ZVN2110G 0.5 A, 100 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
From DIODES Incorporated
Status | ACTIVE |
Case Connection | DRAIN |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (ID) | 0.5000 A |
Drain-source On Resistance-Max | 4 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | SOT-223, 4 PIN |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Power Dissipation Ambient-Max | 2 W |
Pulsed Drain Current-Max (IDM) | 6 A |
Surface Mount | Yes |
Terminal Finish | MATTE TIN |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |